FDME1034CZT Fairchild Semiconductor, FDME1034CZT Datasheet - Page 2

• Manufacturer Part Number: FDME1034CZT
• Description: MOSFET N/P-CH 20V 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDME1034CZT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.8A, 2.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 55 mOhms, 95 mOhms
• Drain-source Breakdown Voltage: 20 V, - 20 V
• Continuous Drain Current: 3.4 A, - 2.3 A
• Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Forward Transconductance Gfs (max / Min): 9 S, 7 S
• Gate Charge Qg: 3 nC, 5.5 nC
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Module Configuration: Dual
• Continuous Drain Current Id: 3.8A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 0.055ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDME1034CZT Rev.C1
©2010 Fairchild Semiconductor Corporation
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
iss
oss
rss
ΔT
ΔT
g
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25 °C unless otherwise noted
Q1
V
V
Q2
V
V
Q1
V
V
Q2
V
V
I
I
I
I
V
V
V
V
V
I
V
V
V
V
V
T
V
V
V
V
V
T
V
V
Q1
V
Q2
V
D
D
D
D
D
J
J
DD
GS
DD
GS
DD
GS
DD
GS
DS
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
= 250 μA, V
= -250 μA, V
= 250 μA, referenced to 25 °C
= -250 μA, referenced to 25 °C
= 250 μA, referenced to 25 °C
=125°C
= 125 °C
= 4.5 V
= -4.5 V
= 16 V, V
= -16 V, V
= 4.5 V, I
= -4.5 V, I
= 10 V, V
= -10 V, V
= 10 V, I
= 4.5 V, R
= -10 V, I
= -4.5 V, R
= 10 V, I
= -10 V, I
= ±8 V, V
= V
= V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 1.5 V, I
= 4.5 V, I
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -1.5 V, I
= -4.5 V, I
DS
DS
Test Conditions
, I
, I
D
D
D
D
D
GS
DS
D
2
D
D
D
D
D
D
GS
GS
= 1 A,
GEN
D
D
D
D
D
D
= 250 μA
= -250 μA
GS
GS
GEN
= 3.4 A,
= -1 A,
GS
=3.4 A
= 3.4 A
= 2.9 A
= 2.5 A
= 2.1 A
= 3.4 A,
= -2.3 A,
= -2.3 A
= -1.8 A
= -1.5 A
= -1.2 A
= -2.3 A ,
= -2.3 A
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 0 V
= 6 Ω
= 6 Ω
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
All
-0.4
Min
-20
0.4
20
225
305
Typ
-0.6
106
120
150
190
128
-12
4.5
4.7
2.0
4.8
1.7
5.5
0.4
0.6
0.6
1.4
0.7
16
40
55
25
50
15
33
16
55
68
85
76
95
-3
3
2
9
7
Max
±10
-1.0
160
142
213
331
530
190
300
405
113
112
1.0
4.2
7.7
66
86
55
75
40
75
10
10
10
10
27
53
10
29
-1
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1
mV/°C
mV/°C
Units
mΩ
μA
μA
nC
pF
pF
pF
ns
V
V
S