FDME1034CZT Fairchild Semiconductor, FDME1034CZT Datasheet - Page 5

• Manufacturer Part Number: FDME1034CZT
• Description: MOSFET N/P-CH 20V 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDME1034CZT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.8A, 2.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 55 mOhms, 95 mOhms
• Drain-source Breakdown Voltage: 20 V, - 20 V
• Continuous Drain Current: 3.4 A, - 2.3 A
• Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Forward Transconductance Gfs (max / Min): 9 S, 7 S
• Gate Charge Qg: 3 nC, 5.5 nC
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Module Configuration: Dual
• Continuous Drain Current Id: 3.8A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 0.055ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDME1034CZT Rev.C1
©2010 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
0.01
4.5
3.0
1.5
0.0
0.1
10
Figure 7.
100
1
0.5
0.1
10
0
10
1
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
-4
Figure 9.
J
A
θ
JA
= MAX RATED
I
= 25
D
= 195
= 3.4 A
o
V
C
Gate Charge Characteristics
DS
o
Operating Area
, DRAIN to SOURCE VOLTAGE (V)
C/W
DS(on)
Forward Bias Safe
Q
V
g
DD
1
, GATE CHARGE (nC)
10
= 10 V
1
-3
V
Figure 11. Single Pulse Maximum Power Dissipation
DD
= 8 V
V
DD
= 12 V
2
10
-2
10
100
1 ms
10 ms
100 ms
1 s
10 s
DC
t, PULSE WIDTH (s)
μ
s
50
3
10
-1
T
J
5
= 25°C unless otherwise noted
10
10
10
10
10
10
10
10
10
500
100
1
Figure 10.
-1
-2
-3
-4
-5
-6
-7
-8
-9
1
0.1
0
f = 1 MHz
V
Figure 8.
GS
V
GS
= 0 V
= 0 V
Gate to Source Voltage
V
V
DS
3
GS ,
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
Gate Leakage Current vs
10
GATE TO SOURCE VOLTAGE (V)
Capacitance vs Drain
T
T
J
J
= 125
= 25
6
1
SINGLE PULSE
R
T
A
θ
JA
o
o
= 25
C
C
= 195
o
C
100
9
o
C/W
12
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C
C
C
iss
oss
rss
10
1000
20
15