FDME1034CZT Fairchild Semiconductor, FDME1034CZT Datasheet - Page 3

• Manufacturer Part Number: FDME1034CZT
• Description: MOSFET N/P-CH 20V 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDME1034CZT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.8A, 2.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 55 mOhms, 95 mOhms
• Drain-source Breakdown Voltage: 20 V, - 20 V
• Continuous Drain Current: 3.4 A, - 2.3 A
• Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Forward Transconductance Gfs (max / Min): 9 S, 7 S
• Gate Charge Qg: 3 nC, 5.5 nC
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Module Configuration: Dual
• Continuous Drain Current Id: 3.8A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 0.055ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDME1034CZT Rev.C1
©2010 Fairchild Semiconductor Corporation
Electrical Characteristics
Drain-Source Diode Characteristics
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
V
t
Q
rr
the user's board design.
SD
rr
Symbol
θJA
is determined with the device mounted on a 1 in
Source to Drain Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Time
Parameter
a. 90 °C/W when mounted on
a 1 in
2
pad of 2 oz copper.
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
= 25 °C unless otherwise noted
V
V
Q1
I
Q2
I
F
F
GS
GS
= 3.4 A, di/dt = 100 A/μS
= -2.3 A, di/dt = 100 A/μs
= 0 V, I
= 0 V, I
Test Conditions
S
S
= 0.9 A
= -0.9 A
3
(Note 2)
(Note 2)
Type
Q1
Q2
Q1
Q2
Q1
Q2
θJC
b. 195 °C/W when mounted on a
is guaranteed by design while R
minimum pad of 2 oz copper.
Min
-0.8
Typ
0.7
8.5
1.4
4.4
16
θCA
Max
-1.2
1.2
17
29
10
10
www.fairchildsemi.com
is determined by
Units
nC
ns
V