FDME1034CZT Fairchild Semiconductor, FDME1034CZT Datasheet

MOSFET N/P-CH 20V 6-MICROFET

FDME1034CZT

Manufacturer Part Number
FDME1034CZT
Description
MOSFET N/P-CH 20V 6-MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDME1034CZT

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
66 mOhm @ 3.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.8A, 2.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
4.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
300pF @ 10V
Power - Max
600mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
55 mOhms, 95 mOhms
Drain-source Breakdown Voltage
20 V, - 20 V
Continuous Drain Current
3.4 A, - 2.3 A
Power Dissipation
1.3 W
Maximum Operating Temperature
+ 150 C
Forward Transconductance Gfs (max / Min)
9 S, 7 S
Gate Charge Qg
3 nC, 5.5 nC
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Module Configuration
Dual
Continuous Drain Current Id
3.8A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.055ohm
Rds(on) Test Voltage Vgs
4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDME1034CZT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDME1034CZT Rev.C1
©2010 Fairchild Semiconductor Corporation
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDME1034CZT
Complementary PowerTrench
N-channel: 20 V, 3.8 A, 66 mΩ P-channel: -20 V, -2.6 A, 142 mΩ
Features
Q1: N-Channel
Q2: P-Channel
V
V
I
P
T
R
R
D
J
DS
GS
D
Pin 1
θJA
θJA
Max r
Max r
Max r
Max r
Max r
Max r
Max r
Max r
Low profile:
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony
oxides
HBM ESD protection level > 1600 V (Note 3)
RoHS Compliant
, T
Symbol
Device Marking
STG
DS(on)
DS(on)
DS(on)
DS(on)
DS(on)
DS(on)
DS(on)
DS(on)
5T
S1
= 66 mΩ at V
= 86 mΩ at V
= 113 mΩ at V
= 160 mΩ at V
= 142 mΩ at V
= 213 mΩ at V
= 331 mΩ at V
= 530 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
G1
Thermal Resistance, Junction to Ambient (Single Operation)
Thermal Resistance, Junction to Ambient (Single Operation)
0.55 mm maximum in the new package
BOTTOM
D2
D1
GS
GS
GS
GS
GS
GS
GS
GS
FDME1034CZT
= 4.5 V, I
= 2.5 V, I
-Pulsed
= 1.8 V, I
= 1.5 V, I
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -1.5 V, I
D2
Device
MicroFET 1.6x1.6 Thin
D1
D
D
G2
D
D
= 3.4 A
= 2.9 A
D
D
D
D
= 2.5 A
= 2.1 A
= -1.5 A
= -2.3 A
= -1.8 A
= -1.2 A
T
S2
A
Parameter
= 25 °C unless otherwise noted
MicroFET 1.6x1.6 Thin
®
Package
T
T
T
A
A
A
MOSFET
= 25 °C
= 25 °C
= 25 °C
1
TOP
General Description
This device is designed specifically as a single package solution
for a DC/DC ‘Switching’ MOSFET in cellular handset and other
ultra-portable
N-Channel & P-Channel MOSFET with low on-state resistance
for minimum conduction losses. The gate charge of each
MOSFET is also minimized to allow high frequency switching
directly from the controlling device.
The MicroFET 1.6x1.6 Thin package offers exceptional thermal
performance for it's physical size and is well suited to switching
and linear mode applications.
Applications
DC-DC Conversion
Level Shifted Load Switch
Reel Size
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
(Note 1b)
7 ’’
applications.
Q1
3.8
20
±8
6
Tape Width
It
-55 to +150
8 mm
features
195
1.4
0.6
90
-2.6
-20
Q2
±8
-6
an
www.fairchildsemi.com
5000 units
Quantity
July 2010
independent
Units
°C/W
°C
W
V
V
A

Related parts for FDME1034CZT

FDME1034CZT Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient (Single Operation) θJA Package Marking and Ordering Information Device Marking Device 5T FDME1034CZT ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 ® MOSFET General Description This device is designed specifically as a single package solution for a DC/DC ‘Switching’ MOSFET in cellular handset and other = 3.4 A ultra-portable ...

Page 2

... Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate to Source Gate Charge gs Q Gate to Drain “Miller” Charge gd ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. °C unless otherwise noted J Test Conditions = 250 μ -250 μ 250 μA, referenced to 25 °C ...

Page 3

... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. °C unless otherwise noted J Test Conditions ...

Page 4

... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. 25°C unless otherwise noted J 3 2.5 V 2.5 = 1.8 V 2.0 = 1.5 V 1.5 μ s 1.0 0.5 1.0 1.5 300 250 ...

Page 5

... MAX RATED 195 C/W θ 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 100 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. 25°C unless otherwise noted J 500 = 8 V 100 μ 100 100 Figure 10. ...

Page 6

... Typical Characteristics (Q1 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0.01 R θ JA 0.005 - Figure 12. ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. 25°C unless otherwise noted 195 C RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 7

... DUTY CYCLE = 0.5% MAX 150 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 17. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. °C unless otherwise noted J μ s 1.5 2.0 Figure 14. Normalized on-Resistance vs Drain 500 400 300 200 100 50 75 100 125 150 0 0.01 ...

Page 8

... MAX RATED 195 C/W θ 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 21. Forward Bias Safe Operating Area 1000 100 ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. 25°C unless otherwise noted - - 100 100 PULSE WIDTH (s) Fig 23. Single Pulse Maximum Power Dissipation 8 1000 100 MHz V ...

Page 9

... Typical Characteristics (Q2 P-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 24. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. °C unless otherwise noted J SINGLE PULSE 195 C/W θ RECTANGULAR PULSE DURATION ( NOTES: DUTY FACTOR ...

Page 10

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 10 www.fairchildsemi.com ...

Page 11

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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