FDME1034CZT Fairchild Semiconductor, FDME1034CZT Datasheet
FDME1034CZT
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FDME1034CZT Summary of contents
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... Thermal Resistance, Junction to Ambient (Single Operation) θJA Package Marking and Ordering Information Device Marking Device 5T FDME1034CZT ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 ® MOSFET General Description This device is designed specifically as a single package solution for a DC/DC ‘Switching’ MOSFET in cellular handset and other = 3.4 A ultra-portable ...
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... Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate to Source Gate Charge gs Q Gate to Drain “Miller” Charge gd ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. °C unless otherwise noted J Test Conditions = 250 μ -250 μ 250 μA, referenced to 25 °C ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. °C unless otherwise noted J Test Conditions ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. 25°C unless otherwise noted J 3 2.5 V 2.5 = 1.8 V 2.0 = 1.5 V 1.5 μ s 1.0 0.5 1.0 1.5 300 250 ...
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... MAX RATED 195 C/W θ 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 100 Figure 11. Single Pulse Maximum Power Dissipation ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. 25°C unless otherwise noted J 500 = 8 V 100 μ 100 100 Figure 10. ...
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... Typical Characteristics (Q1 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0.01 R θ JA 0.005 - Figure 12. ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. 25°C unless otherwise noted 195 C RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR ...
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... DUTY CYCLE = 0.5% MAX 150 0.0 0.5 1 GATE TO SOURCE VOLTAGE (V) GS Figure 17. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. °C unless otherwise noted J μ s 1.5 2.0 Figure 14. Normalized on-Resistance vs Drain 500 400 300 200 100 50 75 100 125 150 0 0.01 ...
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... MAX RATED 195 C/W θ 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 21. Forward Bias Safe Operating Area 1000 100 ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. 25°C unless otherwise noted - - 100 100 PULSE WIDTH (s) Fig 23. Single Pulse Maximum Power Dissipation 8 1000 100 MHz V ...
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... Typical Characteristics (Q2 P-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 24. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev. °C unless otherwise noted J SINGLE PULSE 195 C/W θ RECTANGULAR PULSE DURATION ( NOTES: DUTY FACTOR ...
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... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 10 www.fairchildsemi.com ...
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... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDME1034CZT Rev.C1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...