FDME1034CZT Fairchild Semiconductor, FDME1034CZT Datasheet - Page 4

• Manufacturer Part Number: FDME1034CZT
• Description: MOSFET N/P-CH 20V 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDME1034CZT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 66 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.8A, 2.6A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 55 mOhms, 95 mOhms
• Drain-source Breakdown Voltage: 20 V, - 20 V
• Continuous Drain Current: 3.4 A, - 2.3 A
• Power Dissipation: 1.3 W
• Maximum Operating Temperature: + 150 C
• Forward Transconductance Gfs (max / Min): 9 S, 7 S
• Gate Charge Qg: 3 nC, 5.5 nC
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Module Configuration: Dual
• Continuous Drain Current Id: 3.8A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 0.055ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDME1034CZT Rev.C1
©2010 Fairchild Semiconductor Corporation
Typical Characteristics (Q1 N-Channel)
6
4
2
0
1.6
1.4
1.2
1.0
0.8
0.6
0.0
Figure 3. Normalized On Resistance
6
4
2
0
0.0
Figure 1.
-75
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
V
D
GS
= 3.4 A
-50
vs Junction Temperature
= 4.5 V
V
DS
V
V
GS
T
0.5
DS
= 5 V
-25
J
On Region Characteristics
, GATE TO SOURCE VOLTAGE (V)
,
,
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
0.5
0
T
J
= 150
μ
25
s
1.0
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
V
V
GS
GS
GS
GS
GS
o
C
= 1.8 V
= 4.5 V
= 3 V
= 2.5 V
= 1.5 V
50
T
J
1.0
75
= -55
T
J
1.5
= 25
o
o
100 125 150
C )
C
o
C
μ
s
2.0
1.5
T
J
4
= 25°C unless otherwise noted
0.001
0.01
300
250
200
150
100
0.1
3.0
2.5
2.0
1.5
1.0
0.5
50
10
0
1
Figure 2.
Figure 4.
0.0
1.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
Figure 6.
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
= 0 V
V
1.5
GS
0.2
SD
T
J
= 1.5 V
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
V
= 150
On-Resistance vs Gate to
GS
Source Voltage
Source to Drain Diode
,
2.0
GATE TO SOURCE VOLTAGE (V)
V
I
o
0.4
D
C
GS
2
,
DRAIN CURRENT (A)
= 1.8 V
2.5
V
μ
GS
0.6
s
T
T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
J
= 2.5 V
T
= 125
= 25
3.0
J
= -55
o
C
o
0.8
I
T
D
C
4
J
o
= 3.4 A
3.5
C
= 25
V
GS
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o
= 3 V
V
C
GS
1.0
4.0
= 4.5 V
μ
s
1.2
4.5
6