HD6417032F20 Renesas Electronics America, HD6417032F20 Datasheet - Page 31

• Manufacturer Part Number: HD6417032F20
• Description: IC SUPERH MPU ROMLESS 112QFP
• Manufacturer: Renesas Electronics America
• Series: SuperH® SH7030r

Specifications of HD6417032F20

• Core Processor: SH-1
• Core Size: 32-Bit
• Speed: 20MHz
• Connectivity: EBI/EMI, SCI
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 32
• Program Memory Type: ROMless
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 112-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Program Memory Size: -

Feature
Interrupt controller
(INTC)
User break controller
(UBC)
Clock pulse generator
(CPG)
Bus state controller
(BSC)
Description
Nine external interrupt pins (NMI, IRQ0–IRQ7)
Thirty-one internal interrupt sources
Sixteen programmable priority levels
Generates an interrupt when the CPU or DMAC generates a bus cycle
with specified conditions
Simplifies configuration of an on-chip debugger
On-chip clock pulse generator (maximum operating frequency: 20 MHz):
20-MHz pulses can be generated from a 20-MHz crystal with a duty cycle
Supports external memory access:
Sixteen-bit external data bus
Address space divided into eight areas with the following preset features:
Bus size (8 or 16 bits)
Number of wait cycles can be defined by user.
Type of area (external memory area, DRAM area, etc.)
When the DRAM area is accessed:
Chip select signals (CS0 to CS7) are output for each area
DRAM refresh function:
Programmable refresh interval
Supports CAS-before-RAS refresh and self-refresh modes
DRAM burst access function:
Supports high-speed access modes for DRAM
Wait cycles can be inserted by an external WAIT signal
One-stage write buffer improves the system performance
Data bus parity can be generated and checked
correcting circuit
Simplifies connection to ROM, SRAM, DRAM, and peripheral I/O
RAS and CAS signals for DRAM are output
Tp cycles can be generated to assure RAS precharge time
Address multiplexing is supported internally, so DRAM can be
connected directly
Rev. 7.00 Jan 31, 2006 page 3 of 658
Section 1 Overview
REJ09B0272-0700