UPD70F3713GC-8BS-A Renesas Electronics America, UPD70F3713GC-8BS-A Datasheet - Page 613

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UPD70F3713GC-8BS-A

Manufacturer Part Number
UPD70F3713GC-8BS-A
Description
MCU 32BIT V850ES/LX2 64-LQFP
Manufacturer
Renesas Electronics America
Series
V850ES/Ix2r
Datasheet

Specifications of UPD70F3713GC-8BS-A

Core Processor
RISC
Core Size
32-Bit
Speed
20MHz
Connectivity
CSI, UART/USART
Peripherals
LVD, PWM, WDT
Number Of I /o
39
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
3.5 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD70F3713GC-8BS-A
Manufacturer:
Renesas Electronics America
Quantity:
10 000
<R>
Notes 1. In this case, since the erase command is invalid, data different from the data already written in the flash
Block erase
command
prohibit
Chip erase
command
prohibit
Program
command
prohibit
Read
command
prohibit
Boot area
rewrite
prohibit
Function
2. The boot area for which rewriting is prohibited is invalid.
memory cannot be written.
Block erase command: ×
Chip erase command: √
Program command: √
Read command: √
Block erase command: ×
Chip erase command: ×
Program command: √
Read command: √
Block erase command: ×
Chip erase command: √
Program command: ×
Read command: √
Block erase command: √
Chip erase command: √
Program command: √
Read command: ×
Block erase command: √
Chip erase command: ×
Program command: √
Read command: √
Off-Board Programming
Erase, Write, Read Operations When Each Security Is Set
(√: Executable, ×: Not Executable, −: Not Supported)
On-Board/
Note 1
Note 2
Note 2
CHAPTER 18 FLASH MEMORY
Table 18-4. Security Setting
User’s Manual U17716EJ2V0UD
Block erasure (FlashBlockErase): √
Chip erasure: −
Write (FlashWordWrite): √
Read (FlashWordRead): √
Block erasure (FlashBlockErase): √
Chip erasure: −
Write (FlashWordWrite): √
Read (FlashWordRead): √
Block erasure (FlashBlockErase): √
Chip erasure: −
Write (FlashWordWrite): √
Read (FlashWordRead): √
Block erasure (FlashBlockErase): √
Chip erasure: −
Write (FlashWordWrite): √
Read (FlashWordRead): √
Block erasure (FlashBlockErase): √
Chip erasure: −
Write (FlashWordWrite): √
Read (FlashWordRead): √
Self Programming
Setting of
prohibition can
be initialized by
chip erase
command.
Setting of
prohibition
cannot be
initialized.
Setting of
prohibition can
be initialized by
chip erase
command.
Setting of
prohibition can
be initialized by
chip erase
command.
Setting of
prohibition
cannot be
initialized.
Programming
On-Board/
Off-Board
Notes on Security Setting
Supported only
when setting is
changed from
enable to
prohibit
Programming
Self
611

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