DF2378RVFQ34V Renesas Electronics America, DF2378RVFQ34V Datasheet - Page 299

IC H8S MCU FLASH 512K 144LQFP

DF2378RVFQ34V

Manufacturer Part Number
DF2378RVFQ34V
Description
IC H8S MCU FLASH 512K 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2378RVFQ34V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
34MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2378RVFQ34V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
6.7.12
Burst Operation
With synchronous DRAM, in addition to full access (normal access) in which data is accessed by
outputting a row address for each access, burst access is also provided which can be used when
making consecutive accesses to the same row address. This access enables fast access of data by
simply changing the column address after the row address has been output. Burst access can be
selected by setting the BE bit to 1 in DRAMCR.
DQM has the 2-cycle latency when synchronous DRAM is read. Therefore, the DQM signal
cannot be specified to the Tc2 cycle data output if Tc1 cycle is performed for second or following
column address when the CAS latency is set to 1 to issue the READ command. Do not set the BE
bit to 1 when synchronous DRAM of CAS latency 1 is connected.
Burst Access Operation Timing: Figure 6.52 shows the operation timing for burst access. When
there are consecutive access cycles for continuous synchronous DRAM space, the column address
output cycles continue as long as the row address is the same for consecutive access cycles. The
row address used for the comparison is set with bits MXC2 to MXC0 in DRAMCR.
Rev.7.00 Mar. 18, 2009 page 231 of 1136
REJ09B0109-0700

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