DF2378RVFQ34V Renesas Electronics America, DF2378RVFQ34V Datasheet - Page 1101

• Manufacturer Part Number: DF2378RVFQ34V
• Description: IC H8S MCU FLASH 512K 144LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378RVFQ34V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 34MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• For Use With: YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

26.1.6
Table 26.13 Flash Memory Characteristics (0.35-μm F-ZTAT Version)
Conditions: V
Item
Programming time *
Erase time *
Rewrites
Data retention time
Programming
Erasing
Flash Memory Characteristics
1
*
3
V
regular specifications), T
range: wide-range specifications)
Maximum number of erases *
*
Wait time after SWE bit setting *
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clearing *
Wait time after PSU bit clearing *
Wait time after PV bit setting *
Wait time after H'FF dummy write *
Wait time after PV bit clearing *
Wait time after SWE bit clearing *
Maximum number of programming
*
Wait time after SWE bit setting *
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clearing *
Wait time after ESU bit clearing *
Wait time after EV bit setting *
Wait time after H'FF dummy write *
Wait time after EV bit clearing *
Wait time after SWE bit clearing *
1
6
CC
SS
*
4
1
= AV
= 3.0 V to 3.6 V, AV
*
2
*
4
SS
= 0 V, T
a
= 0°C to 75°C (program/erase operating temperature range:
a
1
1
CC
1
*
*
1
1
= 0°C to 85°C (program/erase operating temperature
1
1
*
4
6
1
1
1
1
6
1
1
= 3.0 V to 3.6 V, V
1
1
1
1
1
1
Symbol
t
t
N
t
N
x
y
z
α
β
γ
ε
η
θ
N
x
y
z
α
β
γ
ε
η
θ
P
E
DRP
WEC
z1
z2
z3
Rev.7.00 Mar. 18, 2009 page 1033 of 1136
Min.
⎯
⎯
100 *
10 *
⎯
1
50
⎯
⎯
⎯
5
5
4
2
2
100
⎯
1
100
⎯
10
10
20
2
4
100
9
7
ref
Section 26 Electrical Characteristics
Typ.
10
50
10000 *
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
= 3.0 V to AV
8
Max.
200
1000
⎯
⎯
100
⎯
⎯
30
200
10
⎯
⎯
⎯
⎯
⎯
⎯
1000 *
⎯
⎯
10
⎯
⎯
⎯
⎯
⎯
⎯
5
Unit
ms/
128 bytes
ms/blocks
Times
Years
Times
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
Times
μs
μs
μs
μs
μs
μs
μs
μs
μs
CC
REJ09B0109-0700
,
Test
Conditions
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
Additional
programming
wait
Erase time
wait