DF2378RVFQ34V Renesas Electronics America, DF2378RVFQ34V Datasheet - Page 265

IC H8S MCU FLASH 512K 144LQFP

DF2378RVFQ34V

Manufacturer Part Number
DF2378RVFQ34V
Description
IC H8S MCU FLASH 512K 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2378RVFQ34V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
34MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2378RVFQ34V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
If a row address hold time or read access time is necessary, making a setting in bits RCD1 and
RCD0 in DRACCR allows from one to three T
maintained, to be inserted between the T
cycle, in which the column address is output. Use the setting that gives the optimum row address
signal hold time relative to the falling edge of the RAS signal according to the DRAM connected
and the operating frequency of this LSI. Figure 6.24 shows an example of the timing when one T
state is set.
Read
Write
Note: n = 2 to 5
Figure 6.24 Example of Timing with One Row Address Output Maintenance State
φ
Address bus
RASn (CSn)
UCAS, LCAS
WE (HWR)
OE (RD)
Data bus
WE (HWR)
OE (RD)
Data bus
T
p
(RAST = 0, CAST = 0)
Row address
r
cycle, in which the RAS signal goes low, and the T
T
r
rw
states, in which row address output is
Rev.7.00 Mar. 18, 2009 page 197 of 1136
T
rw
Section 6 Bus Controller (BSC)
High
High
T
Column address
c1
REJ09B0109-0700
T
c2
c1
rw

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