DF2378RVFQ34V Renesas Electronics America, DF2378RVFQ34V Datasheet - Page 232

• Manufacturer Part Number: DF2378RVFQ34V
• Description: IC H8S MCU FLASH 512K 144LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2300r

Specifications of DF2378RVFQ34V

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 34MHz
• Connectivity: I²C, IrDA, SCI, SmartCard
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 97
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 16x10b; D/A 6x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• For Use With: YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 Bus Controller (BSC)
6.3.9
DRACCR is used to set the DRAM/synchronous DRAM interface bus specifications.
Note: The synchronous DRAM interface is not supported by the H8S/2378 Group.
Bit
15
14
13
12
11
Rev.7.00 Mar. 18, 2009 page 164 of 1136
REJ09B0109-0700
Bit Name
DRMI
—
TPC1
TPC0
SDWCD
DRAM Access Control Register (DRACCR)
Initial Value
0
0
0
0
0 *
R/W
R/W
R/W
R/W
R/W
R/W
Description
Idle Cycle Insertion
An idle cycle can be inserted after a
DRAM/synchronous DRAM access cycle when a
continuous normal space access cycle follows a
DRAM/synchronous DRAM access cycle. Idle cycle
insertion conditions, setting of number of states,
etc., comply with settings of bits ICIS2, ICIS1,
ICIS0, and IDLC in BCR register
0: Idle cycle not inserted
1: Idle cycle inserted
Reserved
This bit can be read from or written to. However,
the write value should always be 0.
Precharge State Control
These bits select the number of states in the RAS
precharge cycle in normal access and refreshing.
00: 1 state
01: 2 states
10: 3 states
11: 4 states
CAS Latency Control Cycle Disabled during
Continuous Synchronous DRAM Space Write
Access
Disables CAS latency control cycle (Tcl) inserted
by WTCRB (H) settings during synchronous DRAM
write access (see figure 6.5).
0: Enables CAS latency control cycle
1: Disables CAS latency control cycle