DF2160BVTE10 Renesas Electronics America, DF2160BVTE10 Datasheet - Page 767

• Manufacturer Part Number: DF2160BVTE10
• Description: IC H8S MCU FLASH 64K 144TQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2100r

Specifications of DF2160BVTE10

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 10MHz
• Connectivity: Host Interface (LPC), I²C, IrDA, SCI, X-Bus
• Peripherals: PWM, WDT
• Number Of I /o: 114
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-TQFP, 144-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Other names: HD64F2160BVTE10; HD64F2160BVTE10

Clock Timing: Table 27.5 shows the clock timing. The clock timing specified here covers clock
( ) output and clock pulse generator (crystal) and external clock input (EXTAL pin) oscillation
settling times. For details on external clock input (EXTAL pin and EXCL pin) timing, see section
25, Clock Pulse Generator.
Table 27.5 Clock Timing
Conditions: V
Item
Clock cycle time
Clock high pulse width
Clock low pulse width
Clock rise time
Clock fall time
Oscillation settling time at reset (crystal)
Oscillation settling time in software
standby (crystal)
External clock output stabilization delay
time
operating frequency, T
CC
= 2.7 V to 3.6 V, V
a
CC
= –20 to +75°C
B = 2.7 V to 5.5 V, V
Symbol
t
t
t
t
t
t
t
t
cyc
CH
CL
Cr
Cf
OSC1
OSC2
DEXT
Min
100
30
30
—
—
20
8
500
Rev. 3.00 Mar 21, 2006 page 711 of 788
SS
Section 27 Electrical Characteristics
Condition
= 0 V, = 2 MHz to maximum
10 MHz
Max
500
—
—
20
20
—
—
—
Unit
ns
ns
ns
ns
ns
ms
ms
µs
REJ09B0300-0300
Reference
Figure 27.6
Figure 27.6
Figure 27.7
Figure 27.8
Figure 27.7