D12312SVF20V Renesas Electronics America, D12312SVF20V Datasheet - Page 787

IC H8S/2312S MCU ROMLESS 100QFP

D12312SVF20V

Manufacturer Part Number
D12312SVF20V
Description
IC H8S/2312S MCU ROMLESS 100QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of D12312SVF20V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D12312SVF20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
17.28.8 Time Taken in Transition to PROM Mode
Until oscillation has stabilized and while PROM mode is being set up, the LSI is unable to accept
commands. After the PROM-mode setup time has elapsed, the LSI enters memory-read mode. See
section 17.29.2, AC Characteristics and Timing in PROM Mode.
17.28.9 Notes on Using PROM Mode
(1) When programming addresses which have previously been programmed, apply auto-erasing
(2) When using PROM mode to program a chip that has been programmed/erased in an on-board
(3) Do not take the chip out of the PROM programmer or reset the chip during programming or
(4) The flash memory is initially in the erased state when the device is shipped by Renesas
(5) This LSI does not support modes such as the product identification mode of general purpose
(6) For further information on the writer programmer and its software version, please refer to the
before auto-programming.
programming mode, auto-erasing before auto-programming is recommended.
erasure. Flash memory is susceptible to permanent damage since a high voltage is being
applied during the programming/erasing. When the reset signal is accidentally input to the
chip, the period in the reset state until the reset signal is released should be longer than the
normal 100 μs.
Technology. For other chips for which the history of erasure is unknown, auto-erasing as a
check and supplement for the initialization (erase) level is recommended.
EPROM. Therefore, the device name is not automatically set in the PROM programmer.
instruction manual for the socket adapter.
Rev.7.00 Feb. 14, 2007 page 753 of 1108
REJ09B0089-0700
Section 17 ROM

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