S9S12P64J0MFT Freescale Semiconductor, S9S12P64J0MFT Datasheet - Page 504
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S9S12P64J0MFT
Manufacturer Part Number
S9S12P64J0MFT
Description
MCU 64K FLASH AUTO 48-QFN
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet
1.S9S12P32J0MFT.pdf
(566 pages)
Specifications of S9S12P64J0MFT
Core Processor
HCS12
Core Size
16-Bit
Speed
32MHz
Connectivity
CAN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
34
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
1.72 V ~ 5.5 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
48-QFN Exposed Pad
Processor Series
S12P
Core
HCS12
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
KIT33812ECUEVME, DEMO9S12PFAME
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Electrical Characteristics
A.1.7
This section describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
504
Human Body
Latch-up
I/O, regulator and analog supply voltage
Voltage difference V
Voltage difference V
Voltage difference V
Voltage difference V
Digital logic supply voltage
Num
1
2
3
4
Model
C
C
C
C
C
Operating Conditions
Please refer to the temperature rating of the device (C, V, M) with regards to
the ambient temperature T
dissipation calculations refer to
Thermal
Series resistance
Storage capacitance
Number of pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Human Body Model (HBM)
Charge Device Model (CDM)
Latch-up current at T
Latch-up current at T
DDX
DDR
SSX
SS3
Positive
Negative
Positive
Negative
Positive
Negative
, V
to V
to V
to V
SSPLL
Rating
Characteristics”.
SSA
DDA
DDX
Table A-3. ESD and Latch-Up Protection Characteristics
to V
Table A-2. ESD and Latch-up Test Conditions
SSX
A
A
S12P-Family Reference Manual, Rev. 1.13
= 125°C
= 27°C
Rating
Table A-4. Operating Conditions
Description
A
and the junction temperature T
Section A.1.8, “Power Dissipation and
NOTE
Symbol
V
∆
∆
∆
∆
V
VDDR
VDDX
VSSX
DD35
VSS
DD
Symbol
V
V
3.13
1.72
I
I
Min
-0.1
-0.1
CDM
HBM
LAT
LAT
J
. For power
refer to
refer to
Symbol
+100
+200
2000
–100
–200
Min
500
Typ
1.8
R1
—
—
—
—
C
5
0
0
Table A-14
Table A-14
Freescale Semiconductor
Value
1500
–2.5
Max
Max
1.98
100
7.5
5.5
0.1
0.1
—
—
—
—
—
—
3
3
Ohm
Unit
Unit
Unit
mA
mA
pF
V
V
V
V
V
V
V
V
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