MC9S12NE64CPV Freescale Semiconductor, MC9S12NE64CPV Datasheet - Page 512

IC MCU 25MHZ ETHERNT/PHY 112LQFP

MC9S12NE64CPV

Manufacturer Part Number
MC9S12NE64CPV
Description
IC MCU 25MHZ ETHERNT/PHY 112LQFP
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet

Specifications of MC9S12NE64CPV

Mfg Application Notes
MC9S12NE64 Integrated Ethernet Controller Implementing an Ethernet Interface with the MC9S12NE64 Web Server Development with MC9S12NE64 and Open TCP
Core Processor
HCS12
Core Size
16-Bit
Speed
25MHz
Connectivity
EBI/EMI, Ethernet, I²C, SCI, SPI
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.375 V ~ 3.465 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
112-LQFP
Data Bus Width
16 bit
Data Ram Size
8 KB
Interface Type
I2C, SCI, SPI
Maximum Clock Frequency
25 MHz
Number Of Programmable I/os
70
Number Of Timers
16 bit
Operating Supply Voltage
- 0.3 V to + 3 V
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
On-chip Adc
10 bit
For Use With
EVB9S12NE64E - BOARD EVAL FOR 9S12NE64DEMO9S12NE64E - DEMO BOARD FOR 9S12NE64
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Lead Free Status / Rohs Status
No RoHS Version Available

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Appendix A Electrical Characteristics
A.11
This section describes the characteristics of the analog-to-digital converter.
A.11.1
Table 18-27 shows conditions under which the ATD operates.
The following constraints exist to obtain full-scale, full range results:
V
beyond the power supply levels that it ties to. If the input level goes outside of this range it will effectively
be clipped.
A.11.2
Three factors — source resistance, source capacitance, and current injection — have an influence on the
accuracy of the ATD.
A.11.2.1
Due to the input pin leakage current as specified in
there will be a voltage drop from the signal source to the ATD input. The maximum source resistance R
specifies results in an error of less than 1/2 LSB (2.5 mV) at the maximum leakage current. If device or
operating conditions are less than worst case or leakage-induced error is acceptable, larger values of source
resistance are allowed.
512
SSA
1
Conditions are shown in
Num C
The minimum time assumes a final sample period of 2 ATD clocks cycles while the maximum time assumes a final sample
period of 16 ATD clocks.
1
2
3
4
5
6
7
≤ V
D Reference Potential
C Differential Reference Voltage
D ATD Clock Frequency
D ATD 10-Bit Conversion Period
D ATD 8-Bit Conversion Period
D Recovery Time (V
P
RL
ATD Electrical Characteristics
ATD Operating Characteristics — 3.3 V Range
Factors Influencing Accuracy
Reference Supply current
≤ V
Source Resistance
Conv, Time at 2.0 MHz ATD Clock f
Conv, Time at 2.0 MHz ATD Clock f
IN
≤ V
Table A-4
RH
DDA
≤ V
Rating
Table 18-27. 3.3V ATD Operating Characteristics
= 3.3 V)
DDA
unless otherwise noted; Supply Voltage 3.3 V-10% <= V
. This constraint exists since the sample buffer amplifier can not drive
MC9S12NE64 Data Sheet, Rev. 1.1
Clock Cycles
Clock Cycles
ATDCLK
ATDCLK
High
Low
1
1
Table A-6
Symbol
N
V
T
N
f
T
ATDCLK
RH
CONV10
CONV10
CONV8
CONV8
t
V
I
V
REC
REF
RH
RL
-V
RL
in conjunction with the source resistance
V
V
Min
DDA
3.0
0.5
14
12
SSA
7
6
/2
Typ
3.3
DDA
<= 3.3 V +10%
Freescale Semiconductor
V
0.250
V
Max
DDA
3.6
2.0
28
14
26
13
20
DDA
/2
Cycles
Cycles
Unit
MHz
mA
µs
µs
µs
V
V
V
S

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