MC908JB8FBE Freescale Semiconductor, MC908JB8FBE Datasheet - Page 58

• Manufacturer Part Number: MC908JB8FBE
• Description: IC MCU 8K FLASH 3MHZ 44-QFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908JB8FBE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 3MHz
• Connectivity: USB
• Peripherals: LVD, POR, PWM
• Number Of I /o: 37
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-QFP
• Processor Series: HC08JB
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: USB
• Maximum Clock Frequency: 3 MHz
• Number Of Programmable I/os: 37
• Number Of Timers: 2
• Operating Supply Voltage: 5.25 V
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68EML08GZE, KITUSBSPIDGLEVME, KITUSBSPIEVME, KIT33810EKEVME
• Minimum Operating Temperature: 0 C
• Controller Family/series: HC08
• No. Of I/o's: 37
• Ram Memory Size: 256Byte
• Cpu Speed: 8MHz
• No. Of Timers: 1
• Embedded Interface Type: SCI, SPI
• Rohs Compliant: Yes
• Package: 44PQFP
• Family Name: HC08
• Maximum Speed: 3 MHz
• Cpu Family: HC08
• Device Core Size: 8b
• Frequency (max): 3MHz
• Total Internal Ram Size: 256Byte
• # I/os (max): 37
• Number Of Timers - General Purpose: 2
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (max): 5.5V
• Operating Supply Voltage (min): 4V
• Instruction Set Architecture: CISC
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 44
• Package Type: PQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

FLASH Memory
4.7 FLASH Program Operation
Technical Data
58
NOTE:
Programming of the FLASH memory is done on a row basis. A row
consists of 64 consecutive bytes starting from addresses $XX00,
$XX40, $XX80 or $XXC0. The procedure for programming a row of the
FLASH memory is outlined below:
This program sequence is repeated throughout the memory until all data
is programmed.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t
Memory
Figure 4-3
FLASH memory.
10. Wait for time, t
11. Clear the HVEN bit.
12. After time, t
1. Set the PGM bit. This configures the memory for program
2. Write any data to any FLASH address within the address range of
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write data to the byte being programmed.
7. Wait for time, t
8. Repeat step 6 and 7 until all the bytes within the row are
9. Clear the PGM bit.
operation and enables the latching of address and data for
programming.
the row to be programmed.
programmed.
again.
Characteristics).
shows a flowchart representation for programming the
FLASH Memory
rcv
MC68HC908JB8•MC68HC08JB8•MC68HC08JT8 — Rev. 2.3
(1 µs), the memory can be accessed in read mode
PROG
nvh
nvs
pgs
(5 µs).
(5 µs).
(10 µs).
(20 µs).
PROG
maximum (see
Freescale Semiconductor
18.13