MC908JB8FBE Freescale Semiconductor, MC908JB8FBE Datasheet - Page 55

IC MCU 8K FLASH 3MHZ 44-QFP

MC908JB8FBE

Manufacturer Part Number
MC908JB8FBE
Description
IC MCU 8K FLASH 3MHZ 44-QFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MC908JB8FBE

Core Processor
HC08
Core Size
8-Bit
Speed
3MHz
Connectivity
USB
Peripherals
LVD, POR, PWM
Number Of I /o
37
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
0°C ~ 70°C
Package / Case
44-QFP
Processor Series
HC08JB
Core
HC08
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
USB
Maximum Clock Frequency
3 MHz
Number Of Programmable I/os
37
Number Of Timers
2
Operating Supply Voltage
5.25 V
Maximum Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, DEMO908GZ60E, M68EML08GZE, KITUSBSPIDGLEVME, KITUSBSPIEVME, KIT33810EKEVME
Minimum Operating Temperature
0 C
Controller Family/series
HC08
No. Of I/o's
37
Ram Memory Size
256Byte
Cpu Speed
8MHz
No. Of Timers
1
Embedded Interface Type
SCI, SPI
Rohs Compliant
Yes
Package
44PQFP
Family Name
HC08
Maximum Speed
3 MHz
Cpu Family
HC08
Device Core Size
8b
Frequency (max)
3MHz
Total Internal Ram Size
256Byte
# I/os (max)
37
Number Of Timers - General Purpose
2
Operating Supply Voltage (typ)
5V
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4V
Instruction Set Architecture
CISC
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
44
Package Type
PQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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4.4 FLASH Control Register
MC68HC908JB8•MC68HC08JB8•MC68HC08JT8 — Rev. 2.3
Freescale Semiconductor
Address:
The FLASH control register (FLCR) controls FLASH program and erase
operations.
HVEN — High Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
Reset:
Read:
Write:
This read/write bit enables high voltage from the charge pump to the
memory for either program or erase operation. It can only be set if
either PGM or ERASE is high and the sequence for erase or
program/verify is followed.
This read/write bit configures the memory for mass erase operation or
block erase operation when the ERASE bit is set.
This read/write bit configures the memory for erase operation. This bit
and the PGM bit should not be set to 1 at the same time.
This read/write bit configures the memory for program operation. This
bit and the ERASE bit should not be set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass Erase operation selected
0 = Block Erase operation selected
1 = Erase operation selected
0 = Erase operation not selected
1 = Program operation selected
0 = Program operation not selected
$FE08
Bit 7
0
0
Figure 4-2. FLASH Control Register (FLCR)
FLASH Memory
6
0
0
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
FLASH Control Register
ERASE
FLASH Memory
1
0
Technical Data
PGM
Bit 0
0
55

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