KM432S2030CT-F10 SAMSUNG [Samsung semiconductor], KM432S2030CT-F10 Datasheet - Page 26

• Manufacturer Part Number: KM432S2030CT-F10
• Description: 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
• Manufacturer: SAMSUNG [Samsung semiconductor]

KM432S2030C
0
1
*Note : 1. All input expect CKE & DQM can be don't care when CS is high at the CLK high going edge.
2
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command
4. A10/AP and BA0~BA1 control bank precharge when precharge command is asserted.
2. Bank active & read/write are controlled by BA0~BA1.
A10/AP
A10/AP
BA0
3
0
0
1
1
0
1
0
0
0
0
1
BA1
4
0
1
0
1
BA0
BA0
0
0
1
1
0
0
1
1
0
0
1
1
x
5
BA1
BA1
0
1
0
1
0
1
0
1
0
0
1
1
x
Active & Read/Write
6
Disable auto precharge, leave bank A active at end of burst.
Disable auto precharge, leave bank B active at end of burst.
Disable auto precharge, leave bank C active at end of burst.
Disable auto precharge, leave bank D active at end of burst.
Enable auto precharge, precharge bank A at end of burst.
Enable auto precharge, precharge bank B at end of burst.
Enable auto precharge, precharge bank C at end of burst.
Enable auto precharge, precharge bank D at end of burst.
Precharge
All Banks
Bank A
Bank B
Bank C
Bank D
Bank C
Bank D
Bank A
Bank B
7
8
9
10
Operation
11
12
13
14
15
REV. 1.1 Mar. '99
CMOS SDRAM
16
17
18
19