KM432S2030CT-F10 SAMSUNG [Samsung semiconductor], KM432S2030CT-F10 Datasheet - Page 23
KM432S2030CT-F10
Manufacturer Part Number
KM432S2030CT-F10
Description
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.KM432S2030CT-F10.pdf
(43 pages)
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KM432S2030C
FUNCTION TRUTH TABLE (TABLE 1)
Refreshing
Accessing
Activating
Abbreviations : RA = Row Address
Register
Current
State
Mode
*Note : 1. All entries assume the CKE was active (High) during the precharge clcok and the current clock cycle.
Row
2. Illegal to bank in specified state ; Function may be Iegal in the bank indicated by BA, depending on the
3. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA (and A
5. Illegal if any bank is not idle.
state of that bank.
CS
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
NOP = No Operation Command
RAS
H
H
H
H
H
H
H
H
X
X
X
L
L
L
L
L
L
L
CAS
X
H
H
H
H
X
H
H
X
H
H
X
L
L
L
L
L
L
WE
X
X
H
X
H
X
X
X
X
X
X
X
H
X
X
L
L
L
CA = Column Address
BA = Bank Address
BA
BA
BA
BA
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
A
ADDR
10
- 23
CA
RA
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
/AP
ILLEGAL
NOP --> Row Active after t
NOP --> Row Active after t
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP --> Idle after t
NOP --> Idle after t
ILLEGAL
ILLEGAL
ILLEGAL
NOP --> Idle after 2 clocks
NOP --> Idle after 2 clocks
ILLEGAL
ILLEGAL
ILLEGAL
AP = Auto Precharge
10
/AP).
RFC
RFC
ACTION
RCD
RCD
REV. 1.1 Mar. '99
CMOS SDRAM
Note
2
2
2
2
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