S71GL256NB0 SPANSION [SPANSION], S71GL256NB0 Datasheet - Page 92

• Manufacturer Part Number: S71GL256NB0
• Description: Stacked Multi-chip Product (MCP)
• Manufacturer: SPANSION [SPANSION]

AC Characteristics
Alternate CE# Controlled Erase and Program Operations–S29GL512N Only
Notes:
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 90 ns and 100 ns speed options are tested with V
92
t
t
JEDEC
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
EHWH
AVWL
DVEH
EHDX
AVAV
GHEL
WLEL
ELEH
EHEL
ELAX
Parameter
AC specifications for 100 ns and 110 ns speed options are tested with V
t
t
WHWH1
WHWH2
t
Std.
t
t
GHEL
t
t
t
t
t
t
t
CPH
WH
WC
WS
AS
AH
DS
DH
CP
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
(OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Write Buffer Program Operation (Notes 2,
3)
Effective Write Buffer
Program Operation (Notes
2, 4)
Effective Accelerated Write
Buffer Program Operation
(Notes 2, 4)
Program Operation (Note 2)
Accelerated Programming
Operation (Note 2)
Sector Erase Operation (Note 2)
S29GLxxxN MirrorBit
A d v a n c e
Per Word
Per Word
Word
Word
TM
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
Flash Family
I n f o r m a t i o n
90
90
IO
= 1.8 V and V
100
100
Speed Options
TBD
TBD
TBD
TBD
TBD
TBD
45
45
45
30
0
0
0
0
0
CC
100
100
= 3.0 V.
S29GLxxxN_00_A4 June 14, 2004
IO
110
= V
110
CC
= 3 V.
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs