MT29F4G08ABBDAH4:D Micron Technology Inc, MT29F4G08ABBDAH4:D Datasheet - Page 68

• Manufacturer Part Number: MT29F4G08ABBDAH4:D
• Description: MICMT29F4G08ABBDAH4:D 4G SLC NAND FLASH
• Manufacturer: Micron Technology Inc

READ PAGE CACHE LAST (3Fh)
Figure 42: READ PAGE CACHE LAST (3Fh) Operation
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. J 9/11 EN
Cycle type
I/O[7:0]
RDY
(SEQUENTIAL OR RANDOM)
READ PAGE CACHE
Page Address N
As defined for
Command
31h
t
WB
t
RCBSY
The READ PAGE CACHE LAST (3Fh) command ends the read page cache sequence and
copies a page from the data register to the cache register. This command is accepted by
the die (LUN) when it is ready (RDY = 1, ARDY = 1). It is also accepted by the die (LUN)
during READ PAGE CACHE (31h, 00h-31h) operations (RDY = 1 and ARDY = 0).
To issue the READ PAGE CACHE LAST (3Fh) command, write 3Fh to the command reg-
ister. After this command is issued, R/B# goes LOW and the die (LUN) is busy
(RDY = 0, ARDY = 0) for
ready (RDY = 1, ARDY = 1). At this point, data can be output from the cache register, be-
ginning at column address 0. The RANDOM DATA READ (05h-E0h) command can be
used to change the column address of the data being output from the cache register.
In devices that have more than one LUN per target, during and following interleaved die
(multi-LUN) operations the READ STATUS ENHANCED (78h) command followed by
the READ MODE (00h) command must be used to select only one die (LUN) and pre-
vent bus contention.
t
RR
D
D0
OUT
D
…
OUT
t
RCBSY. After
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
D
D
OUT
68
n
Command
t
RCBSY, R/B# goes HIGH and the die (LUN) is
3Fh
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
WB
t
RCBSY
t
RR
D
© 2009 Micron Technology, Inc. All rights reserved.
D0
OUT
Read Operations
Page N
D
…
OUT
D
D
OUT
n