MT29F4G08ABBDAH4:D Micron Technology Inc, MT29F4G08ABBDAH4:D Datasheet - Page 42

• Manufacturer Part Number: MT29F4G08ABBDAH4:D
• Description: MICMT29F4G08ABBDAH4:D 4G SLC NAND FLASH
• Manufacturer: Micron Technology Inc

Table 11: Parameter Page Data Structure (Continued)
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. J 9/11 EN
103–104 Bad blocks maximum per unit
105–106 –
108–109 Block endurance for guaranteed valid blocks
115–127 Reserved
Byte
100
101
102
107
110
111
112
113
114
Description
Number of logical units
Number of address cycles
Number of bits per cell
Guaranteed valid blocks at beginning of target
Number of programs per page
Partial programming attributes
Number of bits ECC bits
Number of interleaved address bits
Interleaved operation attributes
MT29F4G08ABBDAH4
MT29F4G08ABBDAHC
MT29F4G16ABBDAHC
MT29F4G16ABBDAH4
MT29F8G08ADBDAH4
MT29F8G16ADBDAH4
MT29F4G08ABADAWP
MT29F4G08ABADAH4
MT29F4G16ABADAWP
MT29F4G16ABADAH4
MT29F8G08ADADAH4
MT29F8G16ADADAH4
MT29F16G08AJADAWP
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
42
Value
01h
01h
01h
01h
02h
02h
01h
01h
01h
01h
02h
02h
04h
23h
01h
50h, 00h
–
01h
00h, 00h
04h
00h
04h
01h
0Eh
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h
Parameter Page Data Structure Tables
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