MT29F4G08ABBDAH4:D Micron Technology Inc, MT29F4G08ABBDAH4:D Datasheet - Page 27

• Manufacturer Part Number: MT29F4G08ABBDAH4:D
• Description: MICMT29F4G08ABBDAH4:D 4G SLC NAND FLASH
• Manufacturer: Micron Technology Inc

Figure 19:
Figure 20:
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. J 9/11 EN
t
t
Fall and
Fall and
Notes:
Notes:
t
t
Rise (3.3V V
Rise (1.8V V
V
1.
2.
3.
4.
5. See TC values in Figure 23 (page 29) for approximate Rp value and TC.
V
1.
2.
3.
4. See TC values in Figure 23 (page 29) for TC and approximate Rp value.
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
t
t
pedance.
t
t
t
t
t
Fall and
Rise dependent on external capacitance and resistive loading and output transistor im-
Rise primarily dependent on external pull-up resistor and external capacitive loading.
Fall = 10ns at 3.3V.
Fall and
Rise is primarily dependent on external pull-up resistor and external capacitive loading.
Fall ≈ 7ns at 1.8V.
–1
CC
CC
-1
)
)
t
t
Rise calculated at 10% and 90% points.
Rise are calculated at 10% and 90% points.
0
0
t Fall
2
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
2
27
t Fall t Rise
4
Asynchronous Interface Bus Operation
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T
T
C
C
0
0
t Rise
2
2
4
4
© 2009 Micron Technology, Inc. All rights reserved.
V
CC
V
6
1.8V
6
CC
3.3V