MT29F4G08ABBDAH4:D Micron Technology Inc, MT29F4G08ABBDAH4:D Datasheet - Page 46

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MT29F4G08ABBDAH4:D

Manufacturer Part Number
MT29F4G08ABBDAH4:D
Description
MICMT29F4G08ABBDAH4:D 4G SLC NAND FLASH
Manufacturer
Micron Technology Inc

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Table 12: Parameter Page Data Structure (Continued)
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. J 9/11 EN
103–104 Bad blocks maximum per unit
105–106 Block endurance
108–109 Block endurance for guaranteed valid blocks
115–127 Reserved
92–95
96–99
Byte
100
101
102
107
110
111
112
113
114
128
Description
Number of pages per block
Number of blocks per unit
Number of logical units
Number of address cycles
Number of bits per cell
Guaranteed valid blocks at beginning of target
Number of programs per page
Partial programming attributes
Number of bits ECC bits
Number of interleaved address bits
Interleaved operation attributes
I/O pin capacitance
MT29F4G08ABBDA3W
MT29F4G16ABBDA3W
MT29F8G08ADBDA3W
MT29F8G16ADBDA3W
MT29F4G08ABADA3W
MT29F4G16ABADA3W
MT29F8G08ADADA3W
MT29F8G16ADADA3W
MT29F4G08ABBDA3W
MT29F4G16ABBDA3W
MT29F8G08ADBDA3W
MT29F8G16ADBDA3W
MT29F4G08ABADA3W
MT29F4G16ABADA3W
MT29F8G08ADADA3W
MT29F8G16ADADA3W
Bare Die Parameter Page Data Structure Tables
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
46
Value
40h, 00h, 00h, 00h
00h, 10h, 00h, 00h
01h
01h
02h
02h
01h
01h
02h
02h
23h
01h
50h, 00h
01h, 05h
01h
00h, 00h
04h
00h
04h
01h
0Eh
00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h, 00h,
00h, 00h
0Ah
0Ah
14h
14h
0Ah
0Ah
14h
14h
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.

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