MT29F4G08ABBDAH4:D Micron Technology Inc, MT29F4G08ABBDAH4:D Datasheet - Page 59

no-image

MT29F4G08ABBDAH4:D

Manufacturer Part Number
MT29F4G08ABBDAH4:D
Description
MICMT29F4G08ABBDAH4:D 4G SLC NAND FLASH
Manufacturer
Micron Technology Inc

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT29F4G08ABBDAH4:D
Manufacturer:
MICRON
Quantity:
1 000
Part Number:
MT29F4G08ABBDAH4:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT29F4G08ABBDAH4:D
Manufacturer:
MICRON
Quantity:
20 000
RANDOM DATA INPUT (85h)
Figure 36: RANDOM DATA INPUT (85h) Operation
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. J 9/11 EN
Cycle type
I/O[7:0]
RDY
As defined for PAGE
(CACHE) PROGRAM
D
The RANDOM DATA INPUT (85h) command changes the column address of the selec-
ted cache register and enables data input on the last-selected die (LUN). This command
is accepted by the selected die (LUN) when it is ready (RDY = 1; ARDY = 1). It is also ac-
cepted by the selected die (LUN) during cache program operations
(RDY = 1; ARDY = 0).
Writing 85h to the command register, followed by two column address cycles containing
the column address, puts the selected die (LUN) into data input mode. After the second
address cycle is issued, the host must wait at least
lected die (LUN) stays in data input mode until another valid command is issued.
Though data input mode is enabled, data input from the host is optional. Data input
begins at the column address specified.
The RANDOM DATA INPUT (85h) command is allowed after the required address cycles
are specified, but prior to the final command cycle (10h, 11h, 15h) of the following com-
mands while data input is permitted: PROGRAM PAGE (80h-10h), PROGRAM PAGE
CACHE (80h-15h), PROGRAM FOR INTERNAL DATA MOVE (85h-10h), and PROGRAM
FOR TWO-PLANE INTERNAL DATA MOVE (85h-11h).
In devices that have more than one die (LUN) per target, the RANDOM DATA INPUT
(85h) command can be used with other commands that support interleaved die (multi-
LUN) operations.
Dn
IN
Dn + 1
D
IN
Command
85h
Address
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
C1
59
Address
C2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
ADL
Column Address Operations
t
ADL before inputting data. The se-
D
Dk
IN
As defined for PAGE
(CACHE) PROGRAM
Dk + 1
D
IN
© 2009 Micron Technology, Inc. All rights reserved.
Dk + 2
D
IN

Related parts for MT29F4G08ABBDAH4:D