MT29F4G08ABBDAH4:D Micron Technology Inc, MT29F4G08ABBDAH4:D Datasheet - Page 66

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MT29F4G08ABBDAH4:D

Manufacturer Part Number
MT29F4G08ABBDAH4:D
Description
MICMT29F4G08ABBDAH4:D 4G SLC NAND FLASH
Manufacturer
Micron Technology Inc

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Figure 40: READ PAGE CACHE SEQUENTIAL (31h) Operation
READ PAGE CACHE RANDOM (00h-31h)
PDF: 09005aef83b25735
m60a_4gb_nand.pdf – Rev. J 9/11 EN
Cycle type
I/O[7:0]
RDY
Command
00h
Page Address M
Address x5
The READ PAGE CACHE RANDOM (00h-31h) command reads the specified block and
page into the data register while the previous page is output from the cache register.
This command is accepted by the die (LUN) when it is ready (RDY = 1, ARDY = 1). It is
also accepted by the die (LUN) during READ PAGE CACHE (31h, 00h-31h) operations
(RDY = 1 and ARDY = 0).
To issue this command, write 00h to the command register, then write n address cycles
to the address register, and conclude by writing 31h to the command register. The col-
umn address in the address specified is ignored. The die (LUN) address must match the
same die (LUN) address as the previous READ PAGE (00h-30h) command or, if applica-
ble, the previous READ PAGE CACHE RANDOM (00h-31h) command.
After this command is issued, R/B# goes LOW and the die (LUN) is busy
(RDY = 0, ARDY = 0) for
with a cache operation (RDY = 1, ARDY = 0), indicating that the cache register is availa-
ble and that the specified page is copying from the NAND Flash array to the data regis-
ter. At this point, data can be output from the cache register beginning at column ad-
dress 0. The RANDOM DATA READ (05h-E0h) command can be used to change the col-
umn address of the data being output from the cache register.
In devices that have more than one die (LUN) per target, during and following inter-
leaved die (multi-LUN) operations the READ STATUS ENHANCED (78h) command fol-
lowed by the READ MODE (00h) command must be used to select only one die (LUN)
and prevent bus contention.
Command
30h
t WB
t R
RR
Command
31h
t WB
t
RCBSY. After
4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory
t RCBSY
66
t RR
t
RCBSY, R/B# goes HIGH and the die (LUN) is busy
D
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D0
OUT
Page M
D
OUT
D
Dn
OUT
Command
31h
© 2009 Micron Technology, Inc. All rights reserved.
t WB
Read Operations
t RCBSY
t RR
Page M+1
D
D0
OUT

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