MT46V32M16D2TH-7L Micron Technology Inc, MT46V32M16D2TH-7L Datasheet - Page 25

MT46V32M16D2TH-7L

Manufacturer Part Number
MT46V32M16D2TH-7L
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V32M16D2TH-7L

Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
512Mb: x4, x8, x16 DDR SDRAM
512Mx4x8x16DDR_A.p65 – Rev. A; Pub 10/00
COMMAND
COMMAND
ADDRESS
ADDRESS
DQS
DQS
CK#
CK#
DQ
DQ
NOTE: 1. DO n = data-out from column n.
CK
CK
6
6
2. Burst length = 4, or an interrupted burst of 8.
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Shown with nominal t AC, t DQSCK, and t DQSQ.
5. READ to PRECHARGE equals two clocks, which allows two data pairs of data-out.
6. PRE = PRECHARGE command; ACT = ACTIVE command.
Bank a,
Bank a,
READ
READ
Col n
Col n
T0
T0
CL = 2
NOP
NOP
T1
T1
CL = 2.5
READ to PRECHARGE
Figure 13
(a or all)
(a or all)
Bank a,
Bank a,
T2
PRE
PRE
T2
25
DO
n
T2n
T2n
DO
n
T3
NOP
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DON’T CARE
t RP
t RP
T3n
T3n
512Mb: x4, x8, x16
T4
T4
NOP
NOP
TRANSITIONING DATA
DDR SDRAM
©2000, Micron Technology, Inc.
Bank a,
Bank a,
T5
T5
ADVANCE
Row
Row
ACT
ACT

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