MT46V32M16D2TH-7L Micron Technology Inc, MT46V32M16D2TH-7L Datasheet - Page 20

MT46V32M16D2TH-7L

Manufacturer Part Number
MT46V32M16D2TH-7L
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V32M16D2TH-7L

Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
750ps
Maximum Clock Rate
266MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Not Compliant
512Mb: x4, x8, x16 DDR SDRAM
512Mx4x8x16DDR_A.p65 – Rev. A; Pub 10/00
COMMAND
COMMAND
COMMAND
ADDRESS
ADDRESS
ADDRESS
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
NOTE: 1. DO n (or b) = data-out from column n (or column b).
2. Burst length = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first).
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order following DO b.
5. Shown with nominal
6. Example applies when READ commands are issued to different devices or nonconsecutive READs.
READ
Bank,
READ
Bank,
Col n
Col n
T0
T0
CL = 2
NOP
NOP
T1
T1
CL = 2.5
Nonconsecutive READ Bursts
t
AC,
t
DQSCK, and
NOP
NOP
T2
T2
Figure 9
DO
n
t
T2n
T2n
DQSQ.
20
DO
n
READ
READ
Bank,
Bank,
Col b
Col b
T3
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3n
T3n
DON’T CARE
T4
T4
NOP
NOP
512Mb: x4, x8, x16
DDR SDRAM
TRANSITIONING DATA
T5
T5
NOP
NOP
DO
b
©2000, Micron Technology, Inc.
T5n
T5n
ADVANCE
DO
b
T6
T6
NOP
NOP

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