MT46V32M16D2TH-7L Micron Technology Inc, MT46V32M16D2TH-7L Datasheet - Page 41

• Manufacturer Part Number: MT46V32M16D2TH-7L
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V32M16D2TH-7L

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 750ps
• Maximum Clock Rate: 266MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Not Compliant

TRUTH TABLE 4 – CURRENT STATE BANK n - COMMAND TO BANK m
(Notes: 1-6; notes appear below and on next page)
NOTE:
(Notes continued on next page)
512Mb: x4, x8, x16 DDR SDRAM
512Mx4x8x16DDR_A.p65 – Rev. A; Pub 10/00
CURRENT STATE CS# RAS# CAS# WE#
1. This table applies when CKE
2. This table describes alternate bank operation, except where noted (i.e., the current state is for bank n and
(With Auto-
(With Auto-
Precharging
Precharge)
Precharge)
Activating,
Precharge
Precharge
Disabled)
Disabled)
Active, or
met (if the previous state was self refresh).
the commands shown are those allowed to be issued to bank m, assuming that bank m is in such a state that the
given command is allowable). Exceptions are covered in the notes below.
(Auto-
(Auto-
Write
Write
Read
Read
Row
Any
Idle
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
H
H
H
H
H
H
H
H
H
H
X
H
L
L
L
L
L
L
L
L
L
L
X
H
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
n-1
was HIGH and CKE
H
H
H
H
H
H
X
X
H
H
H
H
L
H
L
L
L
L
L
L
L
L
L
COMMAND/ACTION
DESELECT (NOP/continue previous operation)
WRITE (select column and start WRITE burst)
PRECHARGE
PRECHARGE
PRECHARGE
NO OPERATION (NOP/continue previous operation)
Any Command Otherwise Allowed to Bank m
ACTIVE (select and activate row)
READ (select column and start READ burst)
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
ACTIVE (select and activate row)
READ (select column and start new READ burst)
WRITE (select column and start WRITE burst)
PRECHARGE
ACTIVE (select and activate row)
READ (select column and start READ burst)
WRITE (select column and start new WRITE burst)
PRECHARGE
n
41
is HIGH (see Truth Table 2) and after
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16
DDR SDRAM
t
XSNR has been
©2000, Micron Technology, Inc.
ADVANCE
7, 9, 3a
NOTES
7, 3a
7, 3a
7, 3a
7, 9
7, 8
7
7
7
7