MT48H8M16LFB4-75:J TR Micron Technology Inc, MT48H8M16LFB4-75:J TR Datasheet - Page 55

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MT48H8M16LFB4-75:J TR

Manufacturer Part Number
MT48H8M16LFB4-75:J TR
Description
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Datasheet

Specifications of MT48H8M16LFB4-75:J TR

Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
8/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
70mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Figure 32:
Figure 33:
PDF: 09005aef832ff1ea/Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr10_08__3.fm - Rev. E 4/09 EN
Command
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
Bank 0
ACTIVE
T0
Row
Row
t CKH
t CMH
Terminating a WRITE Burst
Alternating Bank Write Accesses
t AH
t AH
t AH
t RCD - bank 0
t RAS - bank 0
t RC - bank 0
t RRD
Notes:
Notes:
t CK
T1
NOP
1. DQM is LOW.
1. For this example, BL = 4.
Command
Enable auto precharge
Address
t CMS
t CL
Column m
t DS
Bank 0
T2
WRITE
Din m
CLK
DQ
t CMH
t DH
t CH
Transitioning data
WRITE
Bank,
Col n
t DS
Din m + 1
T0
Din
n
T3
NOP
t DH
TERMINATE
BURST
T1
t DS
Din m + 2
Bank 1
ACTIVE
Row
T4
Row
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
t DH
55
COMMAND
Address
Data
t RCD - bank 1
Don’t Care
NEXT
T2
t DS
Din m + 3
T5
NOP
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR - bank 0
Enable auto precharge
t DS
Column b
Bank 1
WRITE
T6
Din b
t DH
t DS
Din b + 1
T7
NOP
t DH
t RP - bank 0
©2008 Micron Technology, Inc. All rights reserved.
t DS
Din b + 2
Timing Diagrams
T8
NOP
t DH
t DS
Din m + 3
Bank 0
Row
Row
T9
ACTIVE
t RCD - bank 0
t WR - bank 1
t DH
Don’t Care

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