MT48H8M16LFB4-75:J TR Micron Technology Inc, MT48H8M16LFB4-75:J TR Datasheet - Page 55

• Manufacturer Part Number: MT48H8M16LFB4-75:J TR
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-75:J TR

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 70mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 32:
Figure 33:
PDF: 09005aef832ff1ea/Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr10_08__3.fm - Rev. E 4/09 EN
Command
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
Bank 0
ACTIVE
T0
Row
Row
t CKH
t CMH
Terminating a WRITE Burst
Alternating Bank Write Accesses
t AH
t AH
t AH
t RCD - bank 0
t RAS - bank 0
t RC - bank 0
t RRD
Notes:
Notes:
t CK
T1
NOP
1. DQM is LOW.
1. For this example, BL = 4.
Command
Enable auto precharge
Address
t CMS
t CL
Column m
t DS
Bank 0
T2
WRITE
Din m
CLK
DQ
t CMH
t DH
t CH
Transitioning data
WRITE
Bank,
Col n
t DS
Din m + 1
T0
Din
n
T3
NOP
t DH
TERMINATE
BURST
T1
t DS
Din m + 2
Bank 1
ACTIVE
Row
T4
Row
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
t DH
55
COMMAND
Address
Data
t RCD - bank 1
Don’t Care
NEXT
T2
t DS
Din m + 3
T5
NOP
t DH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR - bank 0
Enable auto precharge
t DS
Column b
Bank 1
WRITE
T6
Din b
t DH
t DS
Din b + 1
T7
NOP
t DH
t RP - bank 0
©2008 Micron Technology, Inc. All rights reserved.
t DS
Din b + 2
Timing Diagrams
T8
NOP
t DH
t DS
Din m + 3
Bank 0
Row
Row
T9
ACTIVE
t RCD - bank 0
t WR - bank 1
t DH
Don’t Care