MT48H8M16LFB4-75:J TR Micron Technology Inc, MT48H8M16LFB4-75:J TR Datasheet - Page 35

• Manufacturer Part Number: MT48H8M16LFB4-75:J TR
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-75:J TR

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 70mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 13:
PDF: 09005aef832ff1ea/Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr10_08__3.fm - Rev. E 4/09 EN
Command 1
BA0, BA1
Address
DQM
CKE
A10
CLK
CLK stable
Power-up:
DQ
Vdd and
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Initialize and Load Mode Register
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T = 100μs
Notes:
t
t
CMS
CKS
NOP
T0
t
High-Z
t
CMH
CKH
When in the idle state, two AUTO REFRESH cycles must be performed. After the AUTO
REFRESH cycles are complete, the SDRAM is ready for mode register programming.
Because the mode register powers up in an unknown state, it should be loaded prior to
issuing any operational command. The low-power SDRAM initialization sequence is
shown in Figure 13.
1. PRE = PRECHARGE command, AR = AUTO REFRESH command, LMR = LOAD MODE REGISTER
2. NOPs or DESELECTs must only be provided during
3. NOPs or DESELECTs must only be provided during
t
CK
command.
Precharge
All banks
all banks
t
AS
PRE
T1
t AH
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Tn + 1
AR
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
t
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RFC
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2
To + 1
AR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
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2
Load mode
t AS t AH
t
AS
register
BA0 = L,
BA1 = L
Code
t
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Code
Tp + 1
LMR
RFC time.
MRD time.
t
AH
t
MRD
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Load extended
mode register
3
©2008 Micron Technology, Inc. All rights reserved.
BA0 = L,
BA1 = H
Code
BA0 = L,
Code
BA1 = L
LMR
Tq + 1
t
MRD
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Initialization
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3
Valid
Valid
Valid
Valid
Tr + 1
Don’t Care
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