MT48H8M16LFB4-75:J TR Micron Technology Inc, MT48H8M16LFB4-75:J TR Datasheet - Page 43

• Manufacturer Part Number: MT48H8M16LFB4-75:J TR
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-75:J TR

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 70mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 18:
PDF: 09005aef832ff1ea/Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr10_08__3.fm - Rev. E 4/09 EN
Consecutive READ Bursts
Notes:
1. Each READ command can be to any bank. DQM is LOW.
Command
Command
Address
Address
CLK
CLK
DQ
DQ
T0
T0
Bank,
READ
READ
Col n
Bank,
Col n
CL = 2
CL = 3
T1
T1
NOP
NOP
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
43
T2
T2
NOP
NOP
Dout
n
T3
T3
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NOP
NOP
Dout
Dout
n + 1
n
T4
READ
T4
READ
Bank,
Bank,
Col b
Col b
X = 1 cycle
Dout
n + 2
Dout
n + 1
Transitioning data
X = 2 cycles
T5
T5
NOP
NOP
Dout
n + 2
Dout
n + 3
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T6
T6
NOP
NOP
Timing Diagrams
Dout
n + 3
Dout
b
Don’t Care
T7
NOP
Dout
b