MT48H8M16LFB4-75:J TR Micron Technology Inc, MT48H8M16LFB4-75:J TR Datasheet - Page 38

• Manufacturer Part Number: MT48H8M16LFB4-75:J TR
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-75:J TR

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 70mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Burst Type
Table 19:
CAS Latency (CL)
PDF: 09005aef832ff1ea/Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr10_08__3.fm - Rev. E 4/09 EN
Burst Length
Continuous
2
4
8
Burst Definition Table
n = A0–An/9/8 (location 0–y)
Starting Column Address
A2
0
0
0
0
1
1
1
1
Accesses within a given burst can be programmed to be either sequential or interleaved;
this is referred to as the burst type and is selected via bit M3.
The ordering of accesses within a burst is determined by the BL, the burst type, and the
starting column address, as shown in Table 19.
The CL is the delay, in clock cycles, between the registration of a READ command and
the availability of the output data. The latency can be set to two or three clocks.
If a READ command is registered at clock edge n, and the latency is m clocks, the data
will be available by clock edge n + m. The DQ start driving as a result of the clock edge
one cycle earlier (n + m - 1), and provided that the relevant access times are met, the data
is valid by clock edge n + m. For example, assuming that the clock cycle time is such that
all relevant access times are met, if a READ command is registered at T0 and the latency
is programmed to two clocks, the DQ start driving after T1 and the data is valid by T2, as
shown in Figure 15 on page 39.
Reserved states should not be used as unknown operation or incompatibility with future
versions may result.
A1
A1
0
0
1
1
0
0
1
1
0
0
1
1
A0
A0
A0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
Type = Sequential
Cn + 3...Cn - 1, Cn...
38
Cn, Cn + 1, Cn + 2,
0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0
2-3-4-5-6-7-0-1
3-4-5-6-7-0-1-2
4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4
6-7-0-1-2-3-4-5
7-0-1-2-3-4-5-6
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
0-1
1-0
Order of Accesses Within a Burst
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Type = Interleaved
©2008 Micron Technology, Inc. All rights reserved.
Register Definition
0-1-2-3-4-5-6-7
1-0-3-2-5-4-7-6
2-3-0-1-6-7-4-5
3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3
5-4-7-6-1-0-3-2
6-7-4-5-2-3-0-1
7-6-5-4-3-2-1-0
Not supported
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
0-1
1-0