DSP56F803EVM Freescale Semiconductor, DSP56F803EVM Datasheet - Page 20

KIT EVALUATION FOR DSP56F803

DSP56F803EVM

Manufacturer Part Number
DSP56F803EVM
Description
KIT EVALUATION FOR DSP56F803
Manufacturer
Freescale Semiconductor

Specifications of DSP56F803EVM

Processor To Be Evaluated
56F803
Data Bus Width
16 bit
Interface Type
RS-232, JTAG
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
3.2 DC Electrical Characteristic
20
4.
5.
6.
7.
Input high voltage (XTAL/EXTAL)
Input low voltage (XTAL/EXTAL)
Input high voltage (Schmitt trigger inputs)
Input low voltage (Schmitt trigger inputs)
Input high voltage (all other digital inputs)
Input low voltage (all other digital inputs)
Input current high (pullup/pulldown resistors
disabled, V
Input current low (pullup/pulldown resistors
disabled, V
Input current high (with pullup resistor, V
Input current low (with pullup resistor, V
Input current high (with pulldown resistor, V
Input current low (with pulldown resistor, V
Nominal pullup or pulldown resistor value
Output tri-state current low
Output tri-state current high
Operating Conditions:
Thermal Characterization Parameter, Psi-JT (Ψ
thermocouple on top center of case as defined in JESD51-2. Ψ
temperature in steady state customer environments.
Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site (board)
temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal
resistance.
See Section 5.1 from more details on thermal design considerations.
TJ = Junction Temperature
TA = Ambient Temperature
IN
IN
=V
=V
DD
SS
Characteristic
)
)
V
Table 3-4 DC Electrical Characteristics
SS
= V
SSA
IN
= 0 V, V
1
56F803 Technical Data, Rev. 16
IN
1
=V
=V
IN
IN
SS
=V
DD
=V
)
SS
DD
)
DD
)
JT
)
= V
), is the “resistance” from junction to reference point
DDA
R
Symbol
= 3.0–3.6 V, T
PU
I
I
V
I
I
V
V
I
V
I
IHPU
IHPD
ILPU
ILPD
V
OZH
V
OZL
I
I
IHC
ILC
IHS
ILS
IH
, R
IL
IH
IL
PD
JT
is a useful value to use to estimate junction
A
= –40° to +85°C, C
-210
2.25
Min
-0.3
-0.3
-10
-10
2.2
2.0
20
-1
-1
-1
-1
0
Typ
30
L
Freescale Semiconductor
50pF, f
Max
2.75
180
0.5
5.5
0.8
5.5
0.8
-50
10
10
1
1
1
1
op
= 80MHz
Unit
μA
μA
μA
μA
μA
μA
μA
μA
V
V
V
V
V
V

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