C8051F530-TB Silicon Laboratories Inc, C8051F530-TB Datasheet - Page 33
C8051F530-TB
Manufacturer Part Number
C8051F530-TB
Description
BOARD PROTOTYPE W/C8051F530
Manufacturer
Silicon Laboratories Inc
Type
MCUr
Datasheet
1.C8051F530-TB.pdf
(218 pages)
Specifications of C8051F530-TB
Contents
Board
Processor To Be Evaluated
C8051F52xA and C8051F53xA
Interface Type
USB
Lead Free Status / RoHS Status
Vendor undefined / Vendor undefined
For Use With/related Products
C8051F530
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
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Table 2.9. Port I/O DC Electrical Characteristics
V
Output High
Voltage
Output Low
Voltage
Input High
Voltage
Input Low
Voltage
Input
Leakage
Current
Parameters
REGIN
Table 2.8. Flash Electrical Characteristics
V
Flash Size
Endurance
Erase Cycle
Time
Write Cycle Time
V
DD
DD
Parameter
= 1.8 to 2.75 V; –40 to +125 ºC unless otherwise specified
= 2.7 to 5.25 V, –40 to +125 °C unless otherwise specified
I
I
I
V
V
V
Weak Pullup Off
C8051F52xA/53xA:
Weak Pullup On, V
C8051F52x/52xA/53x/53xA:
Weak Pullup On, V
Weak Pullup On, V
OH
OH
OH
REGIN
REGIN
REGIN
I
I
I
I
I
I
OL
OL
OL
OL
OL
OL
= –3 mA, Port I/O push-pull
= –10 µA, Port I/O push-pull
= –10 mA, Port I/O push-pull
’F520/0A/1/1A and ’F530/0A/1/1A
’F523/3A/4/4A and ’F533/3A/4/4A
’F526/6A/7/7A and ’F536/6A/7/7A
V
Write/Erase Operations
= 70 µA
= 8.5 mA
= 70 µA
= 8.5 mA
= 70 µA
= 8.5 mA
DD
= 1.8 V:
= 2.7 V:
= 5.25 V:
is 2.25 V or greater
Conditions
IN
IN
IN
= 0 V; V
= 0 V; V
= 0 V; V
Conditions
C8051F52x/F52xA/F53x/F53xA
REGIN
REGIN
REGIN
= 1.8 V
= 2.7 V
= 5.25 V
Rev. 1.3
V
V
V
REGIN
REGIN
REGIN
Min
—
—
—
—
—
—
—
—
—
—
—
—
– 0.02
7680
4096
2048
2.25
– 0.4
x 0.7
20 k
Min
27
57
V
150 k
REGIN
Typ
32
65
—
—
Typ
20
65
—
—
—
—
—
—
—
—
—
—
—
5
– 0.7
Max
38
74
—
—
—
V
REGIN
Max
750
550
400
115
Erase/Write
0.3
50
45
40
±2
15
50
—
—
—
—
Units
bytes
ms
µs
x
V
Units
mV
µA
V
V
V
33
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