MT9HVF3272KY-667B1 Micron Technology Inc, MT9HVF3272KY-667B1 Datasheet - Page 47

• Manufacturer Part Number: MT9HVF3272KY-667B1
• Description: MODULE DDR2 256MB 244MDIMM VLP
• Manufacturer: Micron Technology Inc

Specifications of MT9HVF3272KY-667B1

• Memory Type: DDR2 SDRAM
• Memory Size: 256MB
• Speed: 667MT/s
• Package / Case: 244-MDIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 244VLP MiniRDIMM
• Device Core Size: 72b
• Organization: 32Mx72
• Total Density: 256MByte
• Chip Density: 256Mb
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.71A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 55C
• Operating Temperature Classification: Commercial
• Pin Count: 244
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 27:
PDF: 09005aef81c9620b/Source: 09005aef81c961ec
HVF9C32_64_128x72K_2.fm - Rev. B 11/05 EN
47–61 Optional features, not supported
65–71 Manufacturer’s JEDEC ID code
73–90 Module part number (ASCII)
95–98 Module serial number
Byte
127
99–
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
62
63
64
72
91
92
93
94
Address and command setup time,
Address and command hold time,
Data/ Data mask input setup time,
Data/ Data mask input hold time,
Write recovery time,
Write-to-read CMD delay,
Read-to-precharge CMD delay,
Memory analysis probe
Extension for bytes 41 and 42
Minimum active auto refresh time,
Minimum auto refresh to active/
AUTO REFRESH command period,
SDRAM device MAX cycle time,
SDRAM device MAX DQS-DQ skew time,
t
SDRAM device MAX read data hold skew
factor,
PLL relock time
SPD revision
Checksum For bytes 0–62
ECC/ECC and parity
Manufacturer’s JEDEC ID code
Manufacturing location
PCB identification code
Identification code (continued)
Year of manufacture in BCD
Week of manufacture in BCD
Manufacturer-Specific data (RSVD)
DQSQ
Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 47
t
QHS
Description
Notes: 1. The
t
WR
specification is
256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 VLP Reg. MiniDIMM
t
WTR
t
RAS SPD value shown is based on the JEDEC standard value of 45ns; the actual device
t
t
RTP
CK
t
t
t
DH
RFC
IH
t
t
MAX
t
DS
IS
RC
b
b
b
b
t
RAS = 40ns.
Entry (Version)
(Continued)
Release 1.2
-667/-53E
-667/-53E
-667/-53E
MICRON
01–12
-667
-53E
-40E
-667
-53E
-40E
-40E
-667
-53E
-40E
-40E
-40E
-667
-53E
-40E
-667
-53E
-40E
-667
-53E
-40E
1–9
0
47
MT9HVF3272(P)K
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT9HVF3272K/
Variable data
Variable data
Variable data
Variable data
D1/D5
01–0C
6A/6E
01–09
BF/C3
2D
20
25
35
27
37
47
10
15
17
22
27
3C
1E
28
1E
00
00
3C
37
4B
80
18
1E
23
22
28
00
12
2C
00
0F
FF
–
MT9HVF6472(P)K
MT9HVF6472K/
Variable data
Variable data
Variable data
Variable data
Serial Presence-Detect
©2004, 2005 Micron Technology, Inc. All rights reserved.
C9/CD
01–0C
01–09
1E/22
30/34
2D
3C
3C
2C
20
25
35
27
37
47
10
15
17
22
27
1E
28
1E
00
00
37
69
80
18
1E
23
22
28
0F
00
12
00
FF
–
MT9HVF12872(P)K
MT9HVF12872K/
Variable data
Variable data
Variable data
Variable data
D1/D5
01–0C
01–09
6A/6E
BF/C3
2D
20
25
35
27
37
47
10
15
17
22
27
3C
1E
28
1E
00
06
3C
37
7F
80
18
1E
23
22
28
0F
00
12
2C
00
FF
–