MT9HVF3272KY-667B1 Micron Technology Inc, MT9HVF3272KY-667B1 Datasheet - Page 46

• Manufacturer Part Number: MT9HVF3272KY-667B1
• Description: MODULE DDR2 256MB 244MDIMM VLP
• Manufacturer: Micron Technology Inc

Specifications of MT9HVF3272KY-667B1

• Memory Type: DDR2 SDRAM
• Memory Size: 256MB
• Speed: 667MT/s
• Package / Case: 244-MDIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 244VLP MiniRDIMM
• Device Core Size: 72b
• Organization: 32Mx72
• Total Density: 256MByte
• Chip Density: 256Mb
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.71A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 55C
• Operating Temperature Classification: Commercial
• Pin Count: 244
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 27:
PDF: 09005aef81c9620b/Source: 09005aef81c961ec
HVF9C32_64_128x72K_2.fm - Rev. B 11/05 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
0
1
2
3
4
5
6
7
8
9
Number of SPD bytes used by Micron
Total number of bytes in SPD device
Fundamental memory type
Number of row addresses on assembly
Number of column addresses on
assembly
DIMM height and module ranks
Module data width
Module data width (continued)
Module voltage interface levels
SDRAM cycle time,
value, see byte 18)
SDRAM access from clock,
(CL = maximum value, see byte 18)
Module configuration type
Refresh rate/type
SDRAM device width (primary SDRAM)
Error-checking SDRAM data width
Minimum clock delay, back-to-back
random column access
Burst lengths supported
Number of banks on SDRAM device
CAS latencies supported
Module thickness
DDR2 DIMM type
SDRAM module attributes
SDRAM device attributes: Weak driver
(01) and 50Ω ODT (03)
SDRAM cycle time,
SDRAM access from CK,
SDRAM cycle time,
SDRAM access from CK,
Minimum row precharge time,
Minimum row active to row active,
Minimum RAS#-to-CAS# delay,
Minimum RAS# pulse width,
note 1)
Module rank density
Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 47
Description
t
t
t
CK (CL = maximum
CK, MAX CL - 1
CK, MAX CL - 2
t
t
AC, MAX CL - 1
AC, MAX CL - 2
256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 VLP Reg. MiniDIMM
t
AC
t
RAS (see
t
t
RP
RCD
t
RRD
ECC/ECC and parity
0.72in, Single rank
Entry (Version)
Reg. MiniDIMM
256MB, 512MB,
-53E/-40E (4, 3)
-53E/-40E(N/A)
-53E/-40E(N/A)
DDR2 SDRAM
-667 (5, 4, 3)
7.81µs/SELF
SSTL 1.8V
-53E/-40E
-53E/-40E
-667/-53E
1 clock
13, 14
4 or 8
-667
-53E
-40E
-667
-53E
-40E
-667
-667
-667
-53E
-40E
-667
-667
-40E
1GB
128
256
4, 8
10
72
0
8
8
46
MT9HVF3272(P)K
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT9HVF3272K/
02/06
0D
0A
3D
3D
2D
80
08
08
00
48
00
05
30
50
45
50
60
82
08
08
00
0C
04
38
18
01
10
04
03
01
50
45
50
60
50
00
45
00
3C
1E
3C
28
40
MT9HVF6472(P)K
MT9HVF6472K/
Serial Presence-Detect
©2004, 2005 Micron Technology, Inc. All rights reserved.
02/06
0A
3D
3D
2D
0C
3C
3C
80
08
08
0E
00
48
00
05
30
50
45
50
60
82
08
08
00
04
38
18
01
10
04
03
01
50
45
50
60
50
00
45
00
1E
28
80
MT9HVF12872(P)K
MT9HVF12872K/
02/06
0A
3D
3D
2D
80
08
08
0E
00
48
00
05
30
50
45
50
60
82
08
08
00
0C
08
38
18
01
10
04
03
01
50
45
50
60
50
00
45
00
3C
1E
3C
28
01