MT9HVF3272KY-667B1 Micron Technology Inc, MT9HVF3272KY-667B1 Datasheet - Page 26

• Manufacturer Part Number: MT9HVF3272KY-667B1
• Description: MODULE DDR2 256MB 244MDIMM VLP
• Manufacturer: Micron Technology Inc

Specifications of MT9HVF3272KY-667B1

• Memory Type: DDR2 SDRAM
• Memory Size: 256MB
• Speed: 667MT/s
• Package / Case: 244-MDIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 244VLP MiniRDIMM
• Device Core Size: 72b
• Organization: 32Mx72
• Total Density: 256MByte
• Chip Density: 256Mb
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.71A
• Number Of Elements: 9
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 55C
• Operating Temperature Classification: Commercial
• Pin Count: 244
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 8:
Table 9:
PDF: 09005aef81c9620b/Source: 09005aef81c961ec
HVF9C32_64_128x72K_2.fm - Rev. B 11/05 EN
Parameter
V
V
V
Voltage on any pin relative to V
Storage temperature
DDR2 SDRAM device operating temperature (ambient)
Operating temperature (ambient)
Input leakage current; Any input 0V ≤ V
input 0V ≤ V
= 0V)
Output leakage current; 0V ≤ V
ODT are disabled
V
Parameter
Supply voltage
V
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
DD
DD
DD
REF
DD
Q supply voltage relative to V
L Supply Voltage
L supply voltage relative to Vss
supply voltage relative to V
leakage current; V
IN
Absolute Maximum DC Ratings
Recommended DC Operating Conditions
All voltages referenced to V
≤0.95V; (All other pins not under test
Notes: 1. V
REF
= Valid V
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
2. V
3. V
4. V
OUT
SS
SS
DC level of the same. Peak-to-peak noise (non-common mode) on V
±1percent of the DC value. Peak-to-peak AC noise on V
V
tors, is expected to be set equal to V
256MB, 512MB, 1GB: (x72, SR) 244-Pin DDR2 VLP Reg. MiniDIMM
SS
DD
REF
REF
TT
DD
≤ V
REF
is not applied directly to the device. V
Q tracks with V
(
and V
is expected to equal V
DC
DD
level
IN
). This measurement is to be taken at the nearest V
Q; DQs and
SS
≤ V
DD
DD
Q must track each other. V
; V
Symbol
REF
V
V
DD
V
V
V
DD
DD
REF
DD
TT
; V
Command/Address,
RAS#, CAS#, WE# S#,
CKE, CK, CK#, DM
DQ, DQS, DQS#
Q
L
DD
L tracks with V
DD
26
0.49 × V
Q/2 of the transmitting device and to track variations in the
V
REF
Min
1.7
1.7
1.7
- 40
DD
REF
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q 0.50 × V
DD
and must track variations in the DC level of V
DD
TT
Q must be less than or equal to V
.
is a system supply for signal termination resis-
Nom
V
V
1.8
1.8
1.8
Symbol
REF
IN
V
V
T
V
I
T
T
DD
, V
V
DD
I
case
DD
DD
STG
OPR
OZ
I
REF
I
OUT
Q
L
Q 0.51 × V
REF
Electrical Specifications
REF
V
may not exceed ±2 percent of
©2004, 2005 Micron Technology, Inc. All rights reserved.
REF
Max
Min
-1.0
-0.5
-0.5
-0.5
1.9
1.9
1.9
bypass capacitor.
-55
-18
-5
-5
0
0
+ 40
DD
Q
REF
may not exceed
Max
100
Units
2.3
2.3
2.3
2.3
85
55
18
5
5
mV
V
V
V
V
DD
.
Units
Notes
µA
µA
µA
°C
°C
°C
V
V
V
V
3
1
4
4
2
REF
.