IDT72P51777L7-5BBI IDT, Integrated Device Technology Inc, IDT72P51777L7-5BBI Datasheet - Page 17

• Manufacturer Part Number: IDT72P51777L7-5BBI
• Description: IC FLOW CTRL 40BIT 376-BGA
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT72P51777L7-5BBI

• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 72P51777L7-5BBI

DC ELECTRICAL CHARACTERISTICS
(Commercial: V
NOTES:
1. Both WCLK and RCLK toggling at 20MHz.
2. Data inputs toggling at 10MHz.
3. Total Power consumed: PT = [(V
4. Outputs are not 2.5V or 3.3V tolerant.
5. The following inputs should be pulled to GND: WRADD, RDADD, WADEN, FSTR, ESTR, SCLK, SI, EXI, FXI and all Data Inputs.
6. The ZQ pin is used to control the device outputs (Q[39:0], EREN, ERCLK, and ERCLK).
7. Outputs are impedance-controlled. I
8. Outputs are impedance-controlled. I
9. This measurement is taken to ensure that the output has the capability of pulling to the V
10. This measurement is taken to ensure that the output has the capability of pulling to V
IDT72P51767/72P51777 1.8V, MULTI-QUEUE FLOW-CONTROL DEVICES
(128 QUEUES) 40 BIT WIDE CONFIGURATION 5,898,240 and 11,796,480 bits
Symbol
I
I
V
V
V
V
I
I
I
The following inputs should be pulled to V
All other inputs are don't care and should be at a known state.
which gives a nominal 50Ω output impedance.
which gives a nominal 50Ω output impedance.
LI
LO
DD1
DD2
DDQ
OH1
OL1
OH2
OL2
(1,2)
(1, 5)
(1,2)
(8)
(10)
(7)
(9)
DD
Input Leakage Current
Output Leakage Current
Output High Voltage (test conditions: RQ = 205Ω I
Output Low Voltage (test conditions: RQ = 205Ω I
Output High Voltage (test conditions: I
Output Low Voltage (test conditions: I
Active V
Standby V
Active V
= 1.8V ± 0.10V, T
DDQ
DD
DD
Current (V
Current
Current (V
DD
x I
OL
OH
DD
DD
= -(V
A
= (V
DD
= 0°C to +70°C;Industrial: V
) + (V
DD
= 1.8V)
DDQ
DDQ
= 1.8V)
(V
(V
: WEN, REN, SENI, MRS, TDI, TMS and TRST.
Parameter
DDQ
DDQ
DDQ
/2)/(RQ/5) and is guaranteed by device characterization for 175Ω< RQ < 350Ω This parameter is tested at RQ = 250Ω
/2)/(RQ/5) and is guaranteed by device characterization for 175Ω< RQ < 350Ω. This parameter is tested at RQ = 250Ω
= 1.5V HSTL)
= 1.8V eHSTL)
x I
OL
DDQ
OH
= 0.1mA)
= -0.1mA)
)].
OL
OH
= 8mA)
= -8mA)
DD
I/O = HSTL
I/O = eHSTL
I/O = HSTL
I/O = eHSTL
I/O = HSTL
I/O = eHSTL
= 1.8V ± 0.10V, T
17
SS
DDQ
, and is not intended to be used as an impedance measurement point.
rail, and is not intended to be used as an impedance measurement point.
A
= -40°C to +85°C)
V
V
V
DDQ
DDQ
DDQ
Min.
V
–10
–10
—
—
—
—
—
—
/2 -0.12
/2 -0.12
SS
-0.12
V
V
DDQ
DDQ
V
Max.
200
200
120
120
0.2
COMMERCIAL AND INDUSTRIAL
10
10
/2 +0.12
/2 +0.12
DDQ
20
20
TEMPERATURE RANGES
FEBRUARY 11, 2009
Unit
µA
mA
mA
mA
mA
mA
mA
µA
V
V
V
V