MAX17080GTL+ Maxim Integrated Products, MAX17080GTL+ Datasheet - Page 6

• Manufacturer Part Number: MAX17080GTL+
• Description: IC CONTROLLER AMD SVI 40-TQFN
• Manufacturer: Maxim Integrated Products

Specifications of MAX17080GTL+

• Applications: Controller, AMD SVI
• Voltage - Input: 2.7 ~ 5.5 V
• Number Of Outputs: 3
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 40-TQFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Output: -

AMD 2-/3-Output Mobile Serial
VID Controller
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 2, V
V
Typical values are at T
6
DH_ Gate-Driver Source/Sink
Current
DL_ Gate-Driver Source Current
DL_ Gate-Driver Sink Current
Dead Time
Internal BST1, BST2 Switch R
Internal BST3 Switch R
2-WIRE I
SVI Logic Input Current
SVI Logic Input Threshold
SVC Clock Frequency
START Condition Hold Time
Repeated START Condition
Setup Time
STOP Condition Setup Time
Data Hold
Data Setup Time
SVC Low Period
SVC High Period
SVC/SVD Rise and Fall Time
Pulse Width of Spike Suppression
INPUTS AND OUTPUTS
Logic Input Current
Logic Input Levels
Four-Level Input Logic Levels
PGD_IN Logic Input Threshold
FBDC
_______________________________________________________________________________________
_ = V
2
PARAMETER
FBAC_
C BUS LOGIC INTERFACE
= V
IN
OUT3
A
= 12V, V
= +25°C.)
ON
= V
CSP_
ON
CC
= V
= V
I
SYMBOL
DL
t
t
t
t
t
t
t
HD;STA
SU;STO
HD;DAT
CSN_
SU;STA
SU;DAT
DH
DL
t
DD
t
t
I
_
f
I
HIGH
LOW
R
DH
SVC
DL
(SINK)
_
, t
_
DH
_
DL
= V
_
F
= 1.2V, all DAC codes set to the 1.2V code, T
IN3
DH_ forced to 2.5V, BST_ - LX_ forced to 5V
DL_ forced to 2.5V
DL_ forced to 2.5V
DH_ low to DL_ high
DL_ low to DH_ high
BST1, BST2 to V
BST3 to V
SVC, SVD, T
SVC, SVD, rising edge, hysteresis 0.14 x
V
A master device must internally provide a
hold time of at least 300ns for the SVD
signal (referred to the V
to bridge the undefined region of SVC’s
falling edge
Measured from 10% to 90% of V
Input filters on SVD and SVC suppress
noise spike less than 50ns
ILIM3, OPTION, T
OPTION, ILIM3
PGD_IN, rising edge, hysteresis = 65mV
= V
DDIO
SHDN
, PGD_IN, T
, rising edge, hysteresis = 225mV
(V)
DD
= V
A
, I
= +25°C
PGD_IN
BST3
CONDITIONS
DD
A
A
, I
= 10mA
= +25°C
= +25°C
BST1
= 5V, V
High
3.3V
2V
Low
IHMIN
= I
BST2
DDIO
of SVC signal)
DDIO
= 10mA
= 1.8V, V
A
= 0°C to +85°C, unless otherwise noted.
OPTION
V
V
V
0.3 x
0.3 x
-200
2.75
1.65
MIN
160
160
160
160
DDIO
DDIO
0.8
0.4
10
60
CC
-1
-1
9
9
-
= V
GNDS_
TYP
2.2
2.7
20
20
10
10
20
8
= V
V
V
+200
MAX
0.7 x
0.7 x
3.85
2.35
DDIO
DDIO
3.4
2.0
0.4
+1
+1
AGND
35
35
20
20
70
40
= V
UNITS
MHz
PGND
µA
µA
nA
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
A
A
V
V
V
V
,