XCF128XFTG64C Xilinx Inc, XCF128XFTG64C Datasheet - Page 64

• Manufacturer Part Number: XCF128XFTG64C
• Description: IC PROM SRL 128M GATE 64-FTBGA
• Manufacturer: Xilinx Inc

Specifications of XCF128XFTG64C

• Memory Size: 128Mb
• Programmable Type: In System Programmable
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-TBGA
• Access Time: 85ns
• Supply Voltage Range: 1.7V To 2V
• Memory Case Style: FTBGA
• No. Of Pins: 64
• Operating Temperature Range: -40°C To +85°C
• Svhc: No SVHC (15-Dec-2010)
• Package /: RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 122-1578

Table 38: CFI Query System Interface Information
Table 39: Device Geometry Definition
DS617 (v3.0.1) January 07, 2010
Product Specification
Offset
01Bh
01Ch
01Dh
01Eh
01Fh
020h
021h
022h
023h
024h
025h
026h
Offset
027h
028h
029h
02Ah
02Bh
02Ch
02Dh
02Eh
02Fh
030h
031h
032h
033h
034h
035h
038h
R
0017h
0020h
0085h
0095h
0004h
0009h
000Ah
0000h
0004h
0004h
0002h
0000h
Data
V
V
V
V
Typical time-out per single byte/word program = 2
Typical time-out for Buffer Program = 2
Typical time-out per individual block erase = 2
Typical time-out for full chip erase = 2
Maximum time-out for word program = 2
Maximum time-out for Buffer Program = 2
Maximum time-out per individual block erase = 2
Maximum time-out for chip erase = 2
DD
DD
PP
PP
Reserved
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 BCD value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
bit 7 to 4 HEX value in volts
bit 3 to 0 BCD value in 100 millivolts
0018h
0001h
0001h
0006h
0000h
0002h
007Eh
0000h
0000h
0002h
0003h
0000h
0080h
0000h
Data
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase or Write voltage
Logic Supply Maximum Program/Erase or Write voltage
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of identical sized erase block regions within the device bit 7 to 0 = x =
number of Erase Block Regions
Erase Block Region 1 Information
Number of identical-size erase blocks = 007Eh + 1
Erase Block Region 1 Information
Block size in Region 1 = 0200h × 256 byte
Erase Block Region 2 Information
Number of identical-size erase blocks = 0003h + 1
Erase Block Region 2 Information
Block size in Region 2 = 0080h × 256 byte
Reserved for future erase block region information
Platform Flash XL High-Density Configuration and Storage Device
n
in number of bytes
www.xilinx.com
n
n
times typical
n
ms
Description
n
µs
n
times typical
times typical
n
ms
Description
n
n
times typical
µs
n
16 Mbytes
128 Kbyte
x16 Sync.
32 Kbyte
8192 µs
64 bytes
512 µs
256 µs
Value
16 µs
Value
1.7V
8.5V
9.5V
127
2V
1s
4s
–
–
2
4
–
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