IDT71P71804S200BQG8 IDT, Integrated Device Technology Inc, IDT71P71804S200BQG8 Datasheet - Page 9

• Manufacturer Part Number: IDT71P71804S200BQG8
• Description: IC SRAM 18MBIT 200MHZ 165FBGA
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71P71804S200BQG8

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (1M x 18)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 71P71804S200BQG8

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
2. V
Recommended DC Operating and
Temperature Conditions
Absolute Maximum Ratings
NOTE:
1. During production testing, the case temperature equals the ambient tempera-
ture.
I
V
V
V
V
T
T
OUT
IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit)
18 Mb DDR II SRAM Burst of 2
Symbol
Symbol
BIAS
STG
TERM
TERM
TERM
TERM
V
V
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
V
V
T
DDQ
DDQ
REF
DD
SS
A
must not exceed V
Power Supply
I/O Supply Voltage
Ground
Input Reference
Voltage
Voltage
Ambient
Temperature
Supply Voltage on V
Respect to GND
Supply Voltage on V
Respect to GND
respect to GND
Storage Temperature
Continuous Current into Outputs
Voltage on Input terminals with
Voltage on Output and I/O
terminals with respect to GND.
Temperature Under Bias
Parameter
(1)
Rating
DD
during normal operation.
DD
DDQ
with
Min.
0.68
1.7
1.4
with
0
0
V
–0.5 to V
Typ.
–0.5 to V
DDQ
–0.5 to V
1.8
1.5
25
0
–0.5 to +2.9
–55 to +125
–65 to +150
/2
Value
+ 20
DDQ
(1) (2)
DD
DD
Max.
0.95
V
1.9
+0.3
70
+0.3
0
DD
+0.3
6112 tbl 05
6112 tbl 04
Unit
Unit
mA
°C
°C
V
V
V
V
o
V
V
V
V
c
6.42
9
NOTE:
1. Tested at characterization and retested after any design or process change that
Capacitance
Symbol
may affect these parameters.
C
C
C
C
CLK
DQ
IN
O
Input Capacitance
Clock Input Capacitance
Output Capacitance
DQ I/O Capacitance
Parameter
(T
A
= +25°C, f = 1.0MHz)
Commercial Temperature Range
V
V
Conditions
DDQ
DD
= 1.8V
= 1.5V
Max.
5
6
7
7
6112 tbl 06
(1)
Unit
pF
pF
pF
pF