IDT71P71804S200BQG8 IDT, Integrated Device Technology Inc, IDT71P71804S200BQG8 Datasheet - Page 14

• Manufacturer Part Number: IDT71P71804S200BQG8
• Description: IC SRAM 18MBIT 200MHZ 165FBGA
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71P71804S200BQG8

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (1M x 18)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 71P71804S200BQG8

Timing Waveform of Combined Read and Write Cycles
NOTE:
1. If a R/W is low on the next rising edge of K after a read request, the device automatically performs a NOP (No Operation.)
2. The second NOP cycle is not necessary for correct device operation; however, at high clock frequencies, it may be required to prevent
18 Mb DDR II SRAM Burst of 2
IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit)
the bus contention.
K
DQ
LD
CQ
R/W
CQ
K
SA
C
C
NOP
1
Qx1
tKHCH
tKHKL
tIVKH
tKLKH
tAVKH
Read A0
(burst of 2)
A0
2
tKHAX
tKHCH
tKHKH
tKHIX
Read A1
(burst of 2)
tCHCQV
tCHCQX
A1
tCHQX1
3
tCHQV
tKHKH
(NOTE 1)
Q00
NOP
4
Q01
tCHQX
tCHQV
NOP
(Note 1)
(NOTE 2)
Q10
5
Q11
6.42
tCHCQX
tCHCQV
14
Write A2
(burst of 2)
A2
6
tCHQX
tCHQZ
tDVKH
tKHKL
tKHDX
tKLKH
Write A3
(burst of 2)
D20
A3
7
D21
tKHKH
Read A4
(burst of 2)
tDVKH
A4
tKHDX
D30
8
tKHKH
D31
Commercial Temperature Range
9
tCQHQV
6112 drw09
Q40
tCQHQX
10
Q41