IDT71P71804S200BQG8 IDT, Integrated Device Technology Inc, IDT71P71804S200BQG8 Datasheet - Page 19

• Manufacturer Part Number: IDT71P71804S200BQG8
• Description: IC SRAM 18MBIT 200MHZ 165FBGA
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71P71804S200BQG8

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (1M x 18)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 71P71804S200BQG8

JTAG DC Operating Conditions
NOTE:
1. The output impedance of TDO is set to 50 ohms (nominal process) and does not vary with the external resistor connected to ZQ.
JTAG AC Test Conditions
NOTE:
1. For SRAM outputs see AC test load on page 12.
JTAG Input Test Waveform
1.8 V
JTAG Output Test Waveform
I/O Power Supply
Power Supply Voltage
Input High Level
Input Low Level
Output High Voltage (I
Output Low Voltage (I
Input High Level
Input Low Level
Input Rise/Fall Time
Input and Output Timing Reference Level
TCK Input Leakage Current
TMS, TDI Input Leakage Current
TDO Output Leakage Current
IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit)
18 Mb DDR II SRAM Burst of 2
0 V
Parameter
Parameter
0.9 V
0.9 V
OH
OL
= -1mA)
= 1mA)
Test points
Test points
Symbol
V
V
V
V
V
V
I
DDQ
I
I
OL
OH
DD
IL
IL
OL
Symbol
IH
IL
TR/TF
V
V
IH
IL
V
DDQ -
6112 drw 24
1.0/1.0
V
0.9 V
-0.3
Min
1.4
1.7
1.3
-15
Min
1.8
0.9
6112 drw 23
-5
-5
SS
0
0.9 V
0.2
Unit
ns
V
V
V
Typ
1.8
-
-
-
-
-
-
-
-
6112 tbl 20
Note
1
V
6.42
V
DD
Max
V
+15
19
1.9
0.5
0.2
+5
+5
DDQ
DD
+0.3
JTAG AC Test Load
TDO
Unit
µA
µA
µA
V
V
V
V
V
V
6112 tbl 19
Note
1
1
Z
0
= 50Ω
Commercial Temperature Range
6112 drw 25
0.9 V
50Ω
,