IDT71P71804S200BQG8 IDT, Integrated Device Technology Inc, IDT71P71804S200BQG8 Datasheet - Page 12

• Manufacturer Part Number: IDT71P71804S200BQG8
• Description: IC SRAM 18MBIT 200MHZ 165FBGA
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71P71804S200BQG8

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (1M x 18)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 71P71804S200BQG8

AC Test Conditions
NOTE:
1. Parameters are tested with RQ=250Ω
2. VDDQ does not exceed VDD. During AC testing VDDQ is within 300mV of
Input Waveform
Output Waveform
AC Test Load
(V
Core Power Supply Voltage
I/O Power Supply Voltage
Input High Level
Input Low Level
Input Reference Level
Input Rise/Fall Time
DQ Rise/Fall Time
Output Timing Reference Level
(V
18 Mb DDR II SRAM Burst of 2
DDQ
IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit)
DD Q
VDD.
/2) + 0.5V
/2) - 0.5V
Parameter
OUTPUT
Device
Under
Test
V
DDQ
V
REF
/2
ZQ
V
D DQ
Test points
V
Z
/2
R
Symbol
DDQ
0
Q
VREF
TR/TF
V
V
=50 Ω
V
V
DDQ
/2
DD
IH
IL
= 250 Ω
Test points
(1)
6112 drw 04
(V
(V
1.4 to V
1.7 to 1.9
DDQ
DDQ
V
V
0.3/0.3
0.5/0.5
V
Value
DDQ
DDQ
DDQ
V
/2)+ 0.5
/2)- 0.5
6112 drw 08
DDQ
/2
/2
/2
DD
R
V
6112 drw 07
DD Q
/2
L
= 50 Ω
/2
Unit
ns
V
V
V
V
V
V
6112 tbl 11a
Note
2
2
6.42
12
Commercial Temperature Range