IDT71P71804S200BQG8 IDT, Integrated Device Technology Inc, IDT71P71804S200BQG8 Datasheet - Page 7

• Manufacturer Part Number: IDT71P71804S200BQG8
• Description: IC SRAM 18MBIT 200MHZ 165FBGA
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71P71804S200BQG8

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (1M x 18)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 71P71804S200BQG8

Write Descriptions
NOTES:
1) All byte write (BWx) signals are sampled on the rising edge of K and again on
2) The availability of the BWx on designated devices is described in the pin
3) The DDRII Burst of two SRAM has data forwarding. A read request that is
Signal
Write Byte 0
Write Byte 1
Write Byte 2
Write Byte 3
IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit)
18 Mb DDR II SRAM Burst of 2
K will sample the first byte of the two word burst and the rising edge of K will
sample the second byte of the two word burst.
latched into the input if the corresponding BWx is held low. The rising edge of
description table.
initiated on the cycle following a write request to the same address will
produce the newly written data.
K. The data that is present on the data bus in the designated byte will be
BW
X
X
X
L
0
(1,2,3)
BW
X
X
X
L
1
BW
X
X
X
L
2
6112 tbl 09
BW
X
X
X
L
3
6.42
7
Linear Burst Sequence Table
NOTE:
1. SA
0
is the address presented giving the burst sequence a,b.
SA
0
1
0
a
0
1
Commercial Temperature Range
b
0
1
(1)
6112 tbl 22