IDT71P71804S200BQG8 IDT, Integrated Device Technology Inc, IDT71P71804S200BQG8 Datasheet - Page 10

• Manufacturer Part Number: IDT71P71804S200BQG8
• Description: IC SRAM 18MBIT 200MHZ 165FBGA
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71P71804S200BQG8

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (1M x 18)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 71P71804S200BQG8

DC Electrical Characteristics Over the Operating Temperature and
Supply Voltage Range
NOTES:
1. Operating Current is measured at 100% bus utilization.
2. Standby Current is only after all pending read and write burst operations are completed.
3. Outputs are impedance-controlled. I
4. Outputs are impedance-controlled. I
5. This measurement is taken to ensure that the output has the capability of pulling to the V
6. This measurement is taken to ensure that the output has the capability of pulling to V
7. Programmable Impedance Mode.
Input Leakage Current
Output Leakage Current
Operating Current
(x36): DDR
Operating Current
(x18): DDR
Standby Current: NOP
Output High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
18 Mb DDR II SRAM Burst of 2
IDT71P71804 (1M x 18-Bit) 71P71604 (512K x 36-Bit)
250Ω, which gives a nominal 50Ω output impedance.
250Ω, which gives a nominal 50Ω output impedance.
Parameter
Symbol
V
V
V
V
I
OH
I
I
I
OL
SB1
OH2
I
OL
OH1
OL2
DD
DD
OL1
IL
= -(V
= (V
DDQ
DDQ
Output Disabled
I
Cycle Time > t
I
Cycle Time > t
Device Deselected (in NOP state),
I
RQ = 250Ω, I
RQ = 250Ω, I
I
I
V
V
V
f=Max,
All Inputs <0.2V or > VDD -0.2V
OUT
OUT
OUT
OH
OL
/2)/(RQ/5) and is guaranteed by device characterization for 175Ω < RQ < 350Ω. This parameter is tested at RQ =
/2)/(RQ/5) and is guaranteed by device characterization for 175Ω < RQ < 350Ω. This parameter is tested at RQ =
DD
DD
DD
(V
= 0.1mA
= -0.1mA
DD
= Max V
= Max,
= 0mA (outputs open),
= Max,
= 0mA (outputs open),
= 0mA (outputs open),
= 1.8 ± 100mV, V
IN
OH
OH
KHKH
KHKH
Test Conditions
= V
= -15mA
= 15mA
SS
Min
Min
to V
DDQ
DDQ
6.42
10
= 1.4V to 1.9V)
167MHz
167MHz
167MHz
250MH
200MHz
250MH
200MHz
250MH
200MHz
ss
DDQ
, and is not intended to be used as an impedance measurement point.
Z
Z
Z
rail, and is not intended to be used as an impedance measurement point.
V
V
DDQ
DDQ
V
DDQ
V
Min
-2
-2
/2-0.12
/2-0.12
-
-
-
-
-
-
-
-
-
SS
-0.2
V
V
DDQ
DDQ
V
Max
900
800
700
850
750
650
325
300
275
0.2
+2
+2
DDQ
/2+0.12
/2+0.12
Commercial Temperature Range
Unit
µA
µA
mA
mA
mA
V
V
V
V
Note
3,7
4,7
6112 tbl 10c
2
5
6
1
1