IDT7130SA55P IDT, Integrated Device Technology Inc, IDT7130SA55P Datasheet - Page 3

• Manufacturer Part Number: IDT7130SA55P
• Description: IC SRAM 8KBIT 55NS 48DIP
• Manufacturer: IDT, Integrated Device Technology Inc
• Series: -r

Specifications of IDT7130SA55P

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Asynchronous
• Memory Size: 8K (1K x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-DIP
• Density: 8Kb
• Access Time (max): 55ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 20b
• Package Type: PDIP
• Operating Temp Range: 0C to 70C
• Number Of Ports: 2
• Supply Current: 155mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Commercial
• Mounting: Through Hole
• Pin Count: 48
• Word Size: 8b
• Number Of Words: 1K
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 7130SA55P

DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
NOTE:
1. At Vcc
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
ABSOLUTE MAXIMUM RATINGS
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
2. VTERM must not exceed Vcc + 0.5 for more than 25% of the cycle time
CAPACITANCE
(T
NOTES:
1. This parameter is determined by device characterization but is not
2. 3dv references the interpolated capacitance when the input and
3. 11pF max. for other packages.
Symbol
Symbol
V
T
T
T
I
OUT
Sy
A
C
C
A
BIAS
STG
TERM
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of the specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc
+ 0.5V.
|l
|l
V
V
V
production tested.
output signals switch from 0V to 3V or from 3V to 0V.
Ll
LO
IN
OUT
OL
OL
OH
= +25 C, f = 1.0MHz) TQFP ONLY
mbol
|
|
(2)
<
2.0V leakages are undefined.
Temperature
Terminal Voltage
with Respect to
GND
Operating
Temperature
Temperature
Under Bias
Storage
DC Output
Current
Input Leakage
Current
Output Leakage
Current
Output Low Voltage
(l/O0-l/O
Open Drain Output
Low Voltage (
Output High Voltage
Input Capacitance
Output Capacitance
Rating
Parameter
Parameter
(1)
(1)
(1)
7
)
BUSY
Commercial
–0.5 to +7.0
–55 to +125
–55 to +125
0 to +70
,
INT
50
)
Conditions
V
V
IN
IN
(3)
V
V
V
CE
l
l
l
l
OL
OL
OL
OH
= 3dV
= 3dV
CC
IN
CC
–0.5 to +7.0
–55 to +125
–65 to +135
–65 to +150
(1)
= 16mA
= 4mA
= 16mA
= V
Test Conditions
= -4mA
Military
= 0V to V
= 5.5V,
= 5.5V,
50
(2)
IH
, V
Max. Unit
OUT
10
9
CCIN
2689 tbl 01
2689 tbl 05
= 0V to V
Unit
mA
V
= GND to V
C
C
C
pF
pF
6.01
CC
RECOMMENDED
DC OPERATING CONDITIONS
NOTES:
1. V
2. V
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Symbol
V
GND
V
V
Military
Commercial
C
CC
IH
IL
Grade
CC
IL
TERM
(min.) > -1.5V for pulse width less than 10ns.
Min.
must not exceed Vcc + 0.5V.
2.4
—
—
—
—
MILITARY AND COMMERCIAL TEMPERATURE RANGES
7130SA
7140SA
Supply Voltage
Supply Voltage
Input High Voltage
Input Low Voltage
Parameter
–55 C to +125 C
Temperature
0 C to +70 C
(V
Max.
Ambient
0.4
0.5
CC
10
10
—
= 5.0V
Max.
2.4
—
—
—
—
10%)
7130LA
7140LA
–0.5
Min.
4.5
2.2
GND
0
0V
0V
(1)
Max.
Typ.
0.4
0.5
—
5.0
5
5
—
—
0
5.0V
5.0V
Max.
6.0
5.5
0.8
V
0
CC
(2)
10%
10%
Unit
2689 tbl 04
2689 tbl 03
2689 tbl 02
V
V
V
A
A
Unit
3
V
V
V
V