MT46H16M16LFBF-6 IT:A Micron Technology Inc, MT46H16M16LFBF-6 IT:A Datasheet - Page 40

• Manufacturer Part Number: MT46H16M16LFBF-6 IT:A
• Description: IC DDR SDRAM 256MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M16LFBF-6 IT:A

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant
• Other names: Q3368612

Figure 25:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Command
Address
Random WRITE Cycles
DQS
CK#
DM
DQ
CK
Notes:
WRITE
Bank,
Col b
T0
1. D
2. b' (or x', n', a', g') = the next data-in following D
3. Programmed BL = 2, 4, or 8 in cases shown.
4. Each WRITE command may be to any bank.
t
DQSS (NOM)
grammed burst order.
IN
b (or x, n, a, g) = data-in for column b (or x, n, a, g).
WRITE
Bank,
Col x
D
T1
b
IN
T1n
D
b'
IN
WRITE
Bank,
Col n
T2
D
x
IN
40
T2n
D
x'
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
Bank,
Col a
T3
D
256Mb: x16, x32 Mobile DDR SDRAM
n
IN
Transitioning data
T3n
D
n'
IN
IN
b (x, n, a, g), according to the pro-
WRITE
Bank,
Col g
T4
D
a
IN
T4n
D
a'
IN
©2005 Micron Technology, Inc. All rights reserved.
T5
D
NOP
Don’t Care
g
IN
T5n
D
Operations
g'
IN