MT46H16M16LFBF-6 IT:A Micron Technology Inc, MT46H16M16LFBF-6 IT:A Datasheet - Page 25

• Manufacturer Part Number: MT46H16M16LFBF-6 IT:A
• Description: IC DDR SDRAM 256MBIT 60VFBGA
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H16M16LFBF-6 IT:A

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 100mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant
• Other names: Q3368612

Deep Power-Down
Figure 10:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 6/08 EN
Mobile DRAM State Diagram
Auto precharge is nonpersistent in that it is either enabled or disabled for each indi-
vidual READ or WRITE command. This device supports concurrent auto precharge if the
command to the other bank does not interrupt the data transfer to the current bank.
Auto precharge ensures that the precharge is initiated at the earliest valid stage within a
burst. This earliest valid stage is determined as if an explicit PRECHARGE command
were issued at the earliest possible time, without violating
each burst type in “Operations” on page 26. The user must not issue another command
to the same bank until the precharge time (
Deep power-down is an operating mode used to achieve maximum power reduction by
eliminating the power draw of the memory array. Data will not be retained when the
device enters deep power-down mode.
applied
Power
WRITE
Precharge
all banks
Power
EMRS
PRE
MRS
WRITE A
on
power-down
WRITE A
WRITE
Active
WRITE
DPDSX
MRS
CKEL
25
WRITE A
CKEH
PRE
power-down
precharged
Precharge
all banks
PREALL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
active
DPDS
Deep
ACT
Row
256Mb: x16, x32 Mobile DDR SDRAM
PRE
Idle
READ A
t
CKEH
REFSX
READ
RP) is completed.
READ A
PRE
REFS
CKEL
READ
power-down
Precharge
REFA
refresh
Self
BST
READ A
READ
Burst
stop
t
RAS (MIN), as described for
READ A
©2005 Micron Technology, Inc. All rights reserved.
refresh
Automatic sequence
Command sequence
Auto
READ
Commands